• DMN2004K-7 SOT-23-3
DMN2004K-7 SOT-23-3

DMN2004K-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Quantity Unit Price(USD) Ext. Price
5 $0.073 $0.36
50 $0.059 $2.95
150 $0.053 $7.95
500 $0.048 $24.00
3000 $0.042 $126.00
6000 $0.040 $240.00

Inventory:7,790

*The price is for reference only.
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Overview of DMN2004K-7

The DMN2004K-7 is an N-channel enhancement mode MOSFET designed for high-speed power switching applications. This MOSFET features a low on-resistance and fast switching characteristics, making it ideal for use in power management circuits, motor control, and DC-DC converters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN2004K-7 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The DMN2004K-7 offers a low on-state resistance for efficient power switching.
  • Fast Switching Speed: This MOSFET provides fast switching characteristics, suitable for high-speed applications.
  • High Temperature Performance: With a high-temperature rating, the DMN2004K-7 can withstand elevated operating conditions.
  • High Current Handling: Capable of handling high currents, making it suitable for power applications.
  • Enhancement Mode Design: The N-channel enhancement mode design allows for easy control and operation.

Note: For detailed technical specifications, please refer to the DMN2004K-7 datasheet.

Application

  • Power Management Circuits: Ideal for power management circuits requiring efficient power switching.
  • Motor Control: Suitable for motor control applications in robotics, industrial automation, and automotive systems.
  • DC-DC Converters: Used in DC-DC converter circuits for voltage regulation and power conversion.

Functionality

The DMN2004K-7 MOSFET is designed for high-speed power switching applications, offering low on-resistance and fast switching speeds. It provides reliable and efficient operation in various power electronics systems.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching behavior of the MOSFET.
  • Load Connection: Connect the Load circuit between the Drain and Source pins to utilize the switching capabilities of the MOSFET.
  • Heat Management: Ensure proper heat sinking and thermal management to maintain optimal performance under high current conditions.

Frequently Asked Questions

Q: What is the maximum continuous drain current rating of the DMN2004K-7?
A: The DMN2004K-7 is rated for a maximum continuous drain current of X amperes.

Q: Is the DMN2004K-7 suitable for PWM (Pulse Width Modulation) applications?
A: Yes, the DMN2004K-7 can be used in PWM applications for controlling power to various loads.

Equivalent

For similar functionalities, consider these alternatives to the DMN2004K-7:

  • DMN2005K-7: A higher power version of the DMN2004K-7 with increased current handling capabilities.
  • DMN2003K-7: A lower voltage version of the DMN2004K-7 suitable for applications with lower voltage requirements.

DMN2004K-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Diodes Incorporated Product Category FETs - Single
Series DMN2004 Packaging Alternate Packaging
Unit-Weight TO-236-3, SC-59, SOT-23-3 Mounting-Style Surface Mount
Package-Case 1 Channel Technology SOT-23-3
Operating-Temperature 350mW Mounting-Type 150pF @ 16V
Number-of-Channels Standard Supplier-Device-Package 630mA (Ta)
Configuration 550 mOhm @ 540mA, 4.5V FET-Type 1V @ 250μA
Power-Max + 150 C Transistor-Type 8.4 ns
VDSS – Drain-Source Voltage 8 V Input Capacitance 550 mOhms
FET-Feature 5.7 ns

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