DMN2004K-7
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.073 | $0.36 |
50 | $0.059 | $2.95 |
150 | $0.053 | $7.95 |
500 | $0.048 | $24.00 |
3000 | $0.042 | $126.00 |
6000 | $0.040 | $240.00 |
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Part Number : DMN2004K-7
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Package/Case : SOT-23-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : DMN2004K-7 DataSheet (PDF)
The DMN2004K-7 is an N-channel enhancement mode MOSFET designed for high-speed power switching applications. This MOSFET features a low on-resistance and fast switching characteristics, making it ideal for use in power management circuits, motor control, and DC-DC converters. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMN2004K-7 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the DMN2004K-7 datasheet. Functionality The DMN2004K-7 MOSFET is designed for high-speed power switching applications, offering low on-resistance and fast switching speeds. It provides reliable and efficient operation in various power electronics systems. Usage Guide Q: What is the maximum continuous drain current rating of the DMN2004K-7? Q: Is the DMN2004K-7 suitable for PWM (Pulse Width Modulation) applications? For similar functionalities, consider these alternatives to the DMN2004K-7:Overview of DMN2004K-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The DMN2004K-7 is rated for a maximum continuous drain current of X amperes.
A: Yes, the DMN2004K-7 can be used in PWM applications for controlling power to various loads.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Diodes Incorporated | Product Category | FETs - Single |
Series | DMN2004 | Packaging | Alternate Packaging |
Unit-Weight | TO-236-3, SC-59, SOT-23-3 | Mounting-Style | Surface Mount |
Package-Case | 1 Channel | Technology | SOT-23-3 |
Operating-Temperature | 350mW | Mounting-Type | 150pF @ 16V |
Number-of-Channels | Standard | Supplier-Device-Package | 630mA (Ta) |
Configuration | 550 mOhm @ 540mA, 4.5V | FET-Type | 1V @ 250μA |
Power-Max | + 150 C | Transistor-Type | 8.4 ns |
VDSS – Drain-Source Voltage | 8 V | Input Capacitance | 550 mOhms |
FET-Feature | 5.7 ns |
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