• DMG6601LVT-7
DMG6601LVT-7

DMG6601LVT-7

Diodes Inc DMG6601LVT-7 Dual N/P-channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26

Quantity Unit Price(USD) Ext. Price
5 $0.096 $0.48
50 $0.083 $4.15
150 $0.078 $11.70
500 $0.071 $35.50
3000 $0.068 $204.00
6000 $0.066 $396.00

Inventory:7,345

*The price is for reference only.
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Overview of DMG6601LVT-7

The DMG6601LVT-7 is a dual P-channel enhancement mode MOSFET designed for use in power management applications. This MOSFET features a low threshold voltage and high efficiency, making it ideal for load switching and battery protection in various electronic devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMG6601LVT-7 MOSFET for a visual representation.

Key Features

  • Dual P-Channel MOSFET: Features two P-channel enhancement mode MOSFETs in a single package for versatile power management applications.
  • Low Threshold Voltage: The DMG6601LVT-7 has a low threshold voltage, enabling efficient switching operations and reducing power losses.
  • High Efficiency: This MOSFET offers high efficiency in load switching and power management tasks, contributing to overall system performance.
  • Compact Design: With its dual MOSFET configuration, the DMG6601LVT-7 provides a space-saving solution for electronic designs with limited board space.

Note: For detailed technical specifications, please refer to the DMG6601LVT-7 datasheet.

Application

  • Power Management: Ideal for power management applications in portable devices, battery-powered systems, and low-voltage circuits.
  • Load Switching: Suitable for load switching tasks where efficient power control and management are required.
  • Battery Protection: Can be used for battery protection and power routing functions in electronic devices.

Functionality

The DMG6601LVT-7 is a dual P-channel MOSFET that provides efficient power management capabilities for various electronic applications. It offers low threshold voltage and high efficiency for reliable performance.

Usage Guide

  • Gate Connection: Connect the gate pins to the driving circuit to control the switching operation of the MOSFET.
  • Drain-Source Connection: Connect the drain and source pins accordingly based on the desired power routing or load switching configuration.

Frequently Asked Questions

Q: Can the DMG6601LVT-7 be used in automotive applications?
A: Yes, the DMG6601LVT-7 is suitable for automotive applications requiring efficient power management and load switching capabilities.

Equivalent

For similar functionalities, consider these alternatives to the DMG6601LVT-7:

  • DMG2302LVT-7: A single P-channel MOSFET with low threshold voltage and high efficiency for power management applications.
  • DMG6602LVT-7: This dual P-channel MOSFET offers similar performance to the DMG6601LVT-7 with slight variations in specifications.

DMG6601LVT-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOT-26-6 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 3.8 A, 2.5 A Rds On - Drain-Source Resistance 55 mOhms, 110 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 500 mV, 400 mV
Qg - Gate Charge 12.3 nC, 13.8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.3 W
Channel Mode Enhancement Series DMG6601
Brand Diodes Incorporated Configuration Dual
Fall Time 15.6 ns, 2.2 ns Product Type MOSFET
Rise Time 7.4 ns, 4.6 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time 31.2 ns, 18.3 ns Typical Turn-On Delay Time 1.6 ns, 1.7 ns
Unit Weight 0.000282 oz

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