CSD18502Q5B
Texas Instruments CSD18502Q5B N-channel MOSFET Transistor, 204 A, 40 V, 8-Pin VSON
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $1.438 | $1.44 |
| 10 | $1.308 | $13.08 |
| 30 | $1.226 | $36.78 |
| 100 | $1.142 | $114.20 |
| 500 | $1.105 | $552.50 |
| 1000 | $1.090 | $1,090.00 |
Inventory:5,823
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Part Number : CSD18502Q5B
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Package/Case : 8-VSON-CLIP (5x6)
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Brands : TI
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Components Categories : Single FETs, MOSFETs
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Datesheet : CSD18502Q5B DataSheet (PDF)
Overview of CSD18502Q5B
The CSD18502Q5B MOSFET stands as a robust solution in the realm of power electronics, offering a potent combination of high current capacity and low on-resistance. With a drain-source voltage rating of 40V and a continuous drain current of 100A, it exemplifies reliability under demanding operational conditions. Its N-channel configuration ensures efficient current flow in the desired direction
Key Features
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Logic Level
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen-Free
- SON 5 mm × 6 mm Plastic Package
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | CSD18502Q5B | Pbfree Code | Yes |
| Rohs Code | No | Part Life Cycle Code | Active |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | Package Description | SMALL OUTLINE, R-PDSO-N5 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 | Samacsys Manufacturer | Texas Instruments |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Avalanche Energy Rating (Eas) | 387 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40 V | Drain Current-Max (Abs) (ID) | 100 A |
| Drain Current-Max (ID) | 26 A | Drain-source On Resistance-Max | 0.0033 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 27 pF |
| JESD-30 Code | R-PDSO-N5 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 5 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 156 W |
| Pulsed Drain Current-Max (IDM) | 167 A | Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) | Terminal Form | NO LEAD |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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