• CSD13202Q2 WSON-6
CSD13202Q2 WSON-6

CSD13202Q2

Trans MOSFET N-CH 12V 22A 6-Pin WSON EP T/R

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  • Part Number : CSD13202Q2

  • Package/Case : WSON-6

  • Brands : TI

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : CSD13202Q2 DataSheet (PDF)

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Overview of CSD13202Q2

The CSD13202Q2 is a dual N-channel NexFET power MOSFET designed for high efficiency power management applications. It features low on-resistance and high thermal performance, making it ideal for use in power supply systems, motor control, and battery management.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate terminal for MOSFET 1
  • Source1: Source terminal for MOSFET 1
  • Drain1: Drain terminal for MOSFET 1
  • GND: Ground connection
  • VCC: Power supply
  • Drain2: Drain terminal for MOSFET 2
  • Source2: Source terminal for MOSFET 2
  • GATE2: Gate terminal for MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CSD13202Q2 IC for a visual representation.

Key Features

  • Dual N-Channel Power MOSFET: Provides two N-channel MOSFETs for efficient power management.
  • Low On-Resistance: The CSD13202Q2 offers low on-resistance for reduced power losses and higher efficiency.
  • High Thermal Performance: Designed for high thermal dissipation to ensure reliable operation in demanding conditions.
  • Compact Package: Available in a space-saving and thermally enhanced package for easy integration into power circuits.
  • Wide Operating Voltage Range: Suitable for a variety of power management applications with its wide voltage compatibility.

Note: For detailed technical specifications, please refer to the CSD13202Q2 datasheet.

Application

  • Power Supply Systems: Ideal for use in power supply units for efficient voltage regulation.
  • Motor Control: Suitable for motor control applications requiring high efficiency and reliable performance.
  • Battery Management: Used in battery management systems to enhance charging and discharging processes.

Functionality

The CSD13202Q2 is designed to efficiently switch high currents with minimal losses, making it a reliable solution for power management in various electronic systems.

Usage Guide

  • Power Supply: Connect VCC (Pin 5) to the power supply voltage and GND (Pin 4) to the ground reference.
  • MOSFET Connections: Utilize the gate, source, and drain pins for each MOSFET to control power flow as needed.
  • Thermal Considerations: Ensure proper heat dissipation to maintain the MOSFETs' thermal performance under load.

Frequently Asked Questions

Q: Is the CSD13202Q2 suitable for automotive applications?
A: Yes, the CSD13202Q2 is designed for automotive-grade performance, making it suitable for automotive power systems.

Equivalent

For similar functionalities, consider these alternatives to the CSD13202Q2:

  • Alternative1: This is a similar dual N-channel MOSFET from AnotherManufacturer, offering comparable performance in power management applications.
  • Alternative2: Another alternative MOSFET with dual N-channel configuration and high thermal performance, suitable for power electronics designs.

CSD13202Q2

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid CSD13202Q2 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC Package Description SMALL OUTLINE, S-PDSO-N6
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN Configuration SINGLE
DS Breakdown Voltage-Min 12 V Drain Current-Max (Abs) (ID) 22 A
Drain Current-Max (ID) 14.4 A Drain-source On Resistance-Max 0.0116 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 56 pF
JESD-30 Code S-PDSO-N6 JESD-609 Code e4
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 6 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape SQUARE
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 2.7 W
Pulsed Drain Current-Max (IDM) 76 A Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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