CSD17381F4
Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R
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Part Number : CSD17381F4
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Package/Case : 3-PICOSTAR
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Brands : TI
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : CSD17381F4 DataSheet (PDF)
The CSD17381F4 is a NexFET™ Power MOSFET featuring an integrated Schottky diode. This power MOSFET is designed for high-frequency applications and offers low RDS(on) values for improved efficiency in power management circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the CSD17381F4 for a visual representation. Note: For detailed technical specifications, please refer to the CSD17381F4 datasheet. Functionality The CSD17381F4 NexFET™ Power MOSFET with integrated Schottky diode offers high-performance switching capabilities for power management applications, providing improved efficiency and thermal performance. Usage Guide Q: What is the typical operating frequency range for the CSD17381F4? Q: Does the CSD17381F4 require additional heat sinking for thermal management? For similar functionalities, consider these alternatives to the CSD17381F4:Overview of CSD17381F4
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The CSD17381F4 is designed for high-frequency operation, typically ranging from several kHz to MHz depending on the application requirements.
A: The CSD17381F4 features enhanced thermal performance and may not require additional heat sinking under moderate operating conditions. However, for high-power applications, proper thermal management is recommended.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | CSD17381F4 | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | Package Description | CHIP CARRIER, R-XBCC-N3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8541.21.00.40 | Samacsys Manufacturer | Texas Instruments |
Additional Feature | ULTRA LOW RESISTANCE | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (Abs) (ID) | 3.1 A | Drain Current-Max (ID) | 3.1 A |
Drain-source On Resistance-Max | 0.25 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 2.9 pF | JESD-30 Code | R-XBCC-N3 |
JESD-609 Code | e4 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR | Package Style | CHIP CARRIER |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.5 W | Pulsed Drain Current-Max (IDM) | 10 A |
Surface Mount | YES | Terminal Finish | NICKEL GOLD |
Terminal Form | NO LEAD | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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