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CSD16411Q3

MOSFET N-Ch NexFET Power MOSFETs

Inventory:5,938

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Overview of CSD16411Q3

The Texas Instruments CSD16411Q3 is a cutting-edge controller area network (CAN) transceiver IC meticulously crafted for the demands of automotive and industrial applications. Boasting a high-speed, dual-channel design, this transceiver operates smoothly within a wide voltage range of 3.14V to 5.25V, catering to diverse power supply configurations with ease. Its standout feature is its low quiescent current consumption of 5μA in standby mode, ensuring optimal energy efficiency. Additionally, the transceiver's minimal electromagnetic interference (EMI) footprint guarantees reliable communication even in noisy environments. With a recessive differential output voltage of 2V, seamless compatibility with other CAN control modules is assured. Furthermore, the device is equipped with thermal shutdown and undervoltage lockout protection mechanisms, enhancing its durability in challenging operating conditions. For designers looking to seamlessly integrate CAN communication capabilities into their projects, the CSD16411Q3's compact SOIC-8 package and straightforward pinout make it a compelling choice

Key Features

Features for the CSD16411Q3

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package
  • APPLICATIONS
    • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
    • Optimized for Control FET Applications

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Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid CSD16411Q3 Pbfree Code Yes
Rohs Code No Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC Package Description SMALL OUTLINE, R-PDSO-N5
Pin Count 8 Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 16 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 25 V
Drain Current-Max (Abs) (ID) 56 A Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.015 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 43 pF JESD-30 Code R-PDSO-N8
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.7 W Pulsed Drain Current-Max (IDM) 138 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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