• packageimg
packageimg

BSZ070N08LS5ATMA1

OptiMOSª5Power-Transistor,80V, MOSFET-N

Inventory:6,630

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : BSZ070N08LS5ATMA1

  • Package/Case : 8-PowerTDFN

  • Brands : Infineon Technologies

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : BSZ070N08LS5ATMA1 DataSheet (PDF)

Quick Inquiry

Please submit RFQ for BSZ070N08LS5ATMA1 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of BSZ070N08LS5ATMA1

Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ 5 Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 40 V
FET Feature Standard Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL Package / Case 8-PowerTDFN
Base Product Number BSZ070

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

BSH103,215

BSH103,215

N-channel MOSFET transistor with 30V voltage and 0.85A current
BSC600N25NS3 G

BSC600N25NS3 G

High-performance Power Transistor
BSP52T1G

BSP52T1G

NPN Small-Signal Darlington Transistor
BSP613PH6327XTSA1

BSP613PH6327XTSA1

P-MOSFET transistor with unipolar operation, -60V voltage rating, -2.9A current rating, and 1.8W power dissipation in PG-SOT223 package
PBSS4350Z,135

PBSS4350Z,135

Bipolar Transistors - BJT PBSS4350Z/SOT223/SC-73
BSC077N12NS3 G

BSC077N12NS3 G

MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
BSS126H6327XTSA2

BSS126H6327XTSA2

MOSFET N-Ch 600V 21mA SOT-23-3
BSZ096N10LS5ATMA1

BSZ096N10LS5ATMA1

OptiMOSTM5Power-Transistor,100V