• BSZ096N10LS5ATMA1 TSDSON-8
BSZ096N10LS5ATMA1 TSDSON-8

BSZ096N10LS5ATMA1

OptiMOSTM5Power-Transistor,100V

Quantity Unit Price(USD) Ext. Price
1 $1.341 $1.34
200 $0.519 $103.80
500 $0.501 $250.50
1000 $0.493 $493.00

Inventory:7,702

*The price is for reference only.
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  • Part Number : BSZ096N10LS5ATMA1

  • Package/Case : TSDSON-8

  • Brands : Infineon Technologies

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : BSZ096N10LS5ATMA1 DataSheet (PDF)

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Overview of BSZ096N10LS5ATMA1

MOSFET, N-CH, 100V, 40A, 150DEG C, 69W; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0082ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON-FL; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

BSZ096N10LS5ATMA1

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS 5 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
FET Feature Standard Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL Package / Case TSDSON-8
Base Product Number BSZ096 Manufacturer Infineon
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 9.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.7 V Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 69 W Channel Mode Enhancement
Tradename OptiMOS Brand Infineon Technologies
Configuration Single Development Kit EVAL_1K4W_ZVS_FB_CFD7
Fall Time 5.3 ns Forward Transconductance - Min 22 S
Height 1.1 mm Length 3.3 mm
Product Type MOSFET Rise Time 4.6 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 5.7 ns Width 3.3 mm
Part # Aliases BSZ096N10LS5 SP001352994 Unit Weight 0.001367 oz

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