BSP52T1G
NPN Small-Signal Darlington Transistor
Inventory:7,660
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Part Number : BSP52T1G
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Package/Case : SOT223-4
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Brands : Onsemi
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Components Categories : Single Bipolar Transistors
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Datesheet : BSP52T1G DataSheet (PDF)
The BSP52T1G is an N-channel enhancement mode field-effect transistor (FET) designed for use in various electronic applications. This transistor offers low on-resistance and high drain-source voltage capability, making it suitable for power management and switching circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BSP52T1G FET for a visual representation. Note: For detailed technical specifications, please refer to the BSP52T1G datasheet. Functionality The BSP52T1G is an N-channel FET that allows for efficient power handling and control in electronic circuits. It offers a balance of performance and reliability for various applications. Usage Guide Q: Is the BSP52T1G suitable for high-frequency switching applications? For alternatives with similar functionalities, consider the following:Overview of BSP52T1G
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the BSP52T1G offers fast switching speeds, making it suitable for high-frequency switching circuits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | SOT-223-4 / TO-261-4D | Case Outline | 0.0318 |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 1000 |
ON Target | N | Polarity | NPN |
IC Continuous (A) | 1 | V(BR)CEO Min (V) | 80 |
VCE(sat) Max (V) | 1.3 | hFE Min (k) | 2 |
Pricing ($/Unit) | $0.1068Sample |
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