BSC010NE2LS
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.673 | $1.67 |
10 | $1.464 | $14.64 |
30 | $1.335 | $40.05 |
100 | $1.200 | $120.00 |
500 | $1.140 | $570.00 |
1000 | $1.114 | $1,114.00 |
Inventory:3,783
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : BSC010NE2LS
-
Package/Case : TDSON-8
-
Brands : INFINEON
-
Components Categories : Power Field-Effect Transistors
-
Datesheet : BSC010NE2LS DataSheet (PDF)
Overview of BSC010NE2LS
N-Channel 25 V 39A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
Key Features
- Optimized for Synchronous Rectification
- 35% lower RDS(on) than alternative devices
- 45% improvement of FOM over similar devices
- Integrated Schottky-like diode
- RoHS compliant - halogen free
- MSL1 rated
- Benefits
- Highest system efficiency
- Less paralleling required
- Increased power density
- System cost reduction
- Very low voltage overshoot
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | BSC010NE2LS | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | SMALL OUTLINE, R-PDSO-F5 |
Pin Count | 8 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
Avalanche Energy Rating (Eas) | 190 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 25 V |
Drain Current-Max (Abs) (ID) | 100 A | Drain Current-Max (ID) | 40 A |
Drain-source On Resistance-Max | 0.0013 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-F5 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 5 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 96 W | Pulsed Drain Current-Max (IDM) | 400 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | FLAT |
Terminal Position | DUAL | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
BSP296N
Trans MOSFET N-CH 100V 1.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
IRF420
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
IAUT300N10S5N015
Automotive N-Channel MOSFET
IPP65R190CFD
Infineon IPP65R190CFD N-channel MOSFET Transistor, 17.5 A, 700 V, 3+Tab-Pin TO-220
IPB027N10N5
MOSFET TRENCH >=100V
IPW65R110CFD
Infineon IPW65R110CFD N-channel MOSFET Transistor, 31.2 A, 700 V, 3-Pin TO-247
IRL2203N
N-Channel 30 V 116A (Tc) 180W (Tc) Through Hole TO-220AB
SPD02N80C3
Infineon SPD02N80C3 N-channel MOSFET Transistor, 2 A, 800 V, 3-Pin TO-252