• 2N7002A-7 SOT23-3
2N7002A-7 SOT23-3

2N7002A-7

Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R

Quantity Unit Price(USD) Ext. Price
20 $0.029 $0.58
200 $0.023 $4.60
600 $0.020 $12.00
3000 $0.018 $54.00
9000 $0.017 $153.00
21000 $0.016 $336.00

Inventory:8,082

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for 2N7002A-7 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of 2N7002A-7

The 2N7002A-7 is an enhancement-mode field-effect transistor (FET) designed for low-power switching applications. It features a compact SOT-23 package and a low threshold voltage, making it suitable for use in various electronic circuits requiring efficient switching.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N7002A-7 FET for a visual representation.

Key Features

  • Low Threshold Voltage: The 2N7002A-7 has a low threshold voltage, enabling it to switch on with minimal input voltage.
  • Enhancement-Mode Design: This FET is an enhancement-mode transistor, allowing for easy control of the switching operation.
  • Compact Package: Housed in an SOT-23 package, the 2N7002A-7 offers space-saving benefits for compact circuit designs.
  • High-Speed Switching: With its fast switching characteristics, this FET is suitable for applications requiring quick response times.
  • Low Power Consumption: The 2N7002A-7 consumes low power during switching operations, making it energy-efficient.

Note: For detailed technical specifications, please refer to the 2N7002A-7 datasheet.

Application

  • Low-Power Switching Circuits: Ideal for use in low-power electronic circuits for switching applications.
  • Signal Amplification: Can be utilized for signal amplification and signal switching in electronic devices.
  • Logic Level Shifting: Suitable for logic level shifting and interfacing between different voltage domains.

Functionality

The 2N7002A-7 FET is designed for efficient switching operations in low-power applications. It offers reliable performance and ease of use for various electronic circuits.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching operation.
  • Source and Drain: Connect the source (S) and drain (D) pins as per the circuit requirements.
  • Threshold Voltage: Ensure the input voltage meets the threshold to enable FET conduction.

Frequently Asked Questions

Q: Is the 2N7002A-7 suitable for high-frequency applications?
A: While the 2N7002A-7 is primarily designed for low-power switching, it can function in moderate-frequency applications depending on the circuit requirements.

Equivalent

For similar functionalities, consider these alternatives to the 2N7002A-7:

  • BS170: A small-signal N-channel FET with comparable characteristics to the 2N7002A-7.
  • IRLML2502: A logic-level N-channel MOSFET suitable for low-power switching applications.

2N7002A-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 220 mA Rds On - Drain-Source Resistance 6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 540 mW Channel Mode Enhancement
Series 2N7002 Brand Diodes Incorporated
Configuration Single Forward Transconductance - Min 80 mS
Height 1 mm Length 2.9 mm
Product MOSFET Small Signals Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 10 ns Width 1.3 mm
Unit Weight 0.000282 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.