2N7002A-7
Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
20 | $0.029 | $0.58 |
200 | $0.023 | $4.60 |
600 | $0.020 | $12.00 |
3000 | $0.018 | $54.00 |
9000 | $0.017 | $153.00 |
21000 | $0.016 | $336.00 |
Inventory:8,082
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Part Number : 2N7002A-7
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Package/Case : SOT23-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : 2N7002A-7 DataSheet (PDF)
The 2N7002A-7 is an enhancement-mode field-effect transistor (FET) designed for low-power switching applications. It features a compact SOT-23 package and a low threshold voltage, making it suitable for use in various electronic circuits requiring efficient switching. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the 2N7002A-7 FET for a visual representation. Note: For detailed technical specifications, please refer to the 2N7002A-7 datasheet. Functionality The 2N7002A-7 FET is designed for efficient switching operations in low-power applications. It offers reliable performance and ease of use for various electronic circuits. Usage Guide Q: Is the 2N7002A-7 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the 2N7002A-7:Overview of 2N7002A-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: While the 2N7002A-7 is primarily designed for low-power switching, it can function in moderate-frequency applications depending on the circuit requirements.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 220 mA | Rds On - Drain-Source Resistance | 6 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 540 mW | Channel Mode | Enhancement |
Series | 2N7002 | Brand | Diodes Incorporated |
Configuration | Single | Forward Transconductance - Min | 80 mS |
Height | 1 mm | Length | 2.9 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 33 ns |
Typical Turn-On Delay Time | 10 ns | Width | 1.3 mm |
Unit Weight | 0.000282 oz |
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