2N7000-G
Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag
Inventory:7,761
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Part Number : 2N7000-G
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Package/Case : TO-92-3
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Brands : MICROCHIP
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : 2N7000-G DataSheet (PDF)
Overview of 2N7000-G
2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Key Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | 2N7000-G | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | MICROCHIP TECHNOLOGY INC |
Package Description | GREEN PACKAGE-2 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8542.39.00.01 |
Factory Lead Time | 16 Weeks, 4 Days | Samacsys Manufacturer | Microchip |
Additional Feature | HIGH INPUT IMPEDANCE | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 0.2 A |
Drain-source On Resistance-Max | 5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 5 pF | JEDEC-95 Code | TO-92 |
JESD-30 Code | O-PBCY-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | ROUND | Package Style | CYLINDRICAL |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 1 W |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | BOTTOM | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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