• 2N5629 TO-3
2N5629 TO-3

2N5629

Trans GP BJT NPN 100V 16A 3-Pin(2+Tab) TO-3

Quantity Unit Price(USD) Ext. Price
1 $174.602 $174.60
200 $69.668 $13,933.60
500 $67.340 $33,670.00
1000 $66.190 $66,190.00

Inventory:4,449

*The price is for reference only.
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Overview of 2N5629

The 2N5629 is a high-power NPN bipolar junction transistor (BJT) suitable for general-purpose amplification and switching applications. This transistor is designed to handle high power levels and provide reliable performance in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Current flows out through the emitter terminal.
  • Base (B): This terminal controls the transistor's conductivity.
  • Collector (C): Current is collected at the collector terminal.

Circuit Diagram

Include a circuit diagram illustrating the connections and application of the 2N5629 transistor for a visual representation.

Key Features

  • High Power Capability: The 2N5629 is capable of handling high power levels, making it suitable for power amplifier circuits.
  • Low Saturation Voltage: This transistor has a low saturation voltage, leading to efficient switching performance.
  • High Current Gain: The 2N5629 offers high current gain, allowing for small base currents to control larger collector currents.
  • Wide Voltage Range: With a wide voltage rating, this transistor is versatile and can be used in various voltage applications.

Note: For detailed technical specifications, please refer to the 2N5629 datasheet.

Application

  • Power Amplification: Ideal for use in power amplifier circuits due to its high-power capability.
  • Switching Circuits: Suitable for switching applications where low saturation voltage is critical.
  • General Purpose: Can be used in various general-purpose amplification and switching circuits.

Functionality

The 2N5629 is an NPN BJT that amplifies and switches electronic signals. It provides high power performance and can be employed in a wide range of applications requiring amplification or switching.

Usage Guide

  • Connections: Connect the emitter, base, and collector terminals of the transistor according to the application requirements.
  • Biasing: Ensure proper biasing of the transistor for optimal performance in amplification or switching operations.
  • Heat Dissipation: Provide adequate heat sinking for the 2N5629 to prevent overheating during high-power operation.

Frequently Asked Questions

Q: Is the 2N5629 suitable for high-frequency applications?
A: The 2N5629 is typically used in low to medium frequency applications due to its characteristics.

Equivalent

For similar functionalities, consider these alternatives to the 2N5629:

  • 2N4401: A general-purpose NPN transistor with similar characteristics to the 2N5629.
  • 2N3904: This is a commonly used NPN transistor suitable for a wide range of low-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Mfr Microchip Technology
Series - Package Bulk
Product Status Active Transistor Type PNP
Current - Collector (Ic) (Max) 16 A Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max 200 W
Frequency - Transition - Operating Temperature -
Mounting Type Through Hole Package / Case TO-204AA, TO-3
Supplier Device Package TO-204AD (TO-3)

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