• 2N3766 TO-66-2
2N3766 TO-66-2

2N3766

Bipolar Transistors - BJT Power BJT

Quantity Unit Price(USD) Ext. Price
1 $71.943 $71.94
200 $27.841 $5,568.20
500 $26.863 $13,431.50
1000 $26.379 $26,379.00

Inventory:9,556

*The price is for reference only.
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Overview of 2N3766

The 2N3766 is a high-power NPN transistor designed for general-purpose amplifier and switching applications. This transistor features a high current and voltage ratings, making it suitable for various electronic projects.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Output connection for amplified current
  • Base (B): Controls the current flow between the collector and emitter
  • Emitter (E): Ground connection

Circuit Diagram

Include a circuit diagram illustrating the usage of the 2N3766 transistor in amplifier or switching circuits for better understanding.

Key Features

  • High Power Capability: The 2N3766 can handle high power levels, making it suitable for applications requiring high output.
  • High Voltage Rating: With its high voltage ratings, this transistor can be used in circuits with high voltage requirements.
  • Low Saturation Voltage: The 2N3766 exhibits low saturation voltage, ensuring efficient operation in switching applications.
  • Wide Operating Temperature Range: Operates effectively across a wide temperature range, suitable for diverse environmental conditions.
  • Durable Construction: Built to withstand rugged usage and provide long-term reliability in electronic circuits.

Note: For detailed technical specifications, please refer to the 2N3766 datasheet.

Application

  • Amplification: Ideal for use in audio amplifier circuits and other amplification tasks.
  • Switching: Suitable for switching applications in power control circuits.
  • Pulse Circuits: Used in pulse circuit applications where high power handling is required.

Functionality

The 2N3766 transistor is designed to amplify and switch electronic signals with high power requirements. It provides reliable performance in various electronic applications.

Usage Guide

  • Collector Connection: Connect the load to the collector terminal.
  • Base Control: Apply the input signal or control voltage to the base terminal to control the transistor's operation.
  • Emitter Ground: Connect the emitter terminal to the ground reference.

Frequently Asked Questions

Q: Can the 2N3766 be used in high-frequency applications?
A: The 2N3766 is primarily designed for medium-power applications and may not be suitable for high-frequency operations. Consider specialized transistors for high-frequency requirements.

Equivalent

For similar functionalities, consider these alternatives to the 2N3766:

  • 2N3773: A high-power NPN transistor with comparable specifications and performance characteristics.
  • MJ15003: This power transistor offers similar power handling capabilities and voltage ratings to the 2N3766.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Microchip Product Category Bipolar Transistors - BJT
RoHS N Mounting Style Through Hole
Package / Case TO-66-2 Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 60 V
Collector- Base Voltage VCBO 80 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 2.5 V Maximum DC Collector Current 4 A
Pd - Power Dissipation 25 W Gain Bandwidth Product fT -
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Brand Microchip Technology Continuous Collector Current 4 A
DC Collector/Base Gain hfe Min 20 DC Current Gain hFE Max 160
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si
Unit Weight 0.338401 oz

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