• 2N5885 TO-204-2
2N5885 TO-204-2

2N5885

Trans GP BJT NPN 60V 25A 3-Pin(2+Tab) TO-3

Quantity Unit Price(USD) Ext. Price
1 $194.234 $194.23
200 $77.502 $15,500.40
500 $74.911 $37,455.50
1000 $73.632 $73,632.00

Inventory:5,653

*The price is for reference only.
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  • Part Number : 2N5885

  • Package/Case : TO-204-2

  • Brands : onsemi

  • Components Categories : Bipolar Transistors - BJT

  • Datesheet : 2N5885 DataSheet (PDF)

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Overview of 2N5885

The 2N5885 is a silicon power transistor designed for high-voltage, high-speed power switching applications. It features a rugged design capable of handling high power dissipation, making it suitable for demanding environments.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the 2N5885 transistor for a visual representation.

Key Features

  • High Voltage Rating: The 2N5885 can withstand high voltages, making it suitable for high-voltage applications.
  • High Speed: This transistor offers fast switching speeds, enabling rapid power switching operations.
  • Rugged Construction: With its robust design, the 2N5885 can handle high power dissipation and operate reliably in harsh conditions.
  • Low Saturation Voltage: The transistor exhibits low saturation voltage, minimizing power loss during operation.
  • TO-3 Package: Available in a TO-3 package, providing easy mounting and heat dissipation.

Note: For detailed technical specifications, please refer to the 2N5885 datasheet.

Application

  • Power Switching: The 2N5885 is commonly used in power switching applications such as motor control, solenoid drivers, and high-voltage power supplies.
  • Amplification: This transistor can also be used for amplification purposes in audio and RF circuits.
  • Voltage Regulation: Suitable for voltage regulation circuits requiring high voltage handling capabilities.

Functionality

The 2N5885 transistor is designed to switch high voltages and currents with high speed and efficiency. Its rugged construction and low saturation voltage make it an ideal choice for demanding power switching applications.

Usage Guide

  • Connection: Connect the collector (C) to the load, the emitter (E) to ground, and apply the control signal to the base (B) to switch the transistor.
  • Heat Dissipation: Ensure proper heat sinking for the TO-3 package to dissipate heat generated during operation.

Frequently Asked Questions

Q: Can the 2N5885 be used in high-power applications?
A: Yes, the 2N5885 is designed for high-power switching applications and can handle high power dissipation.

Equivalent

For similar functionalities, consider these alternatives to the 2N5885:

  • 2N5886: A complementary NPN transistor with similar characteristics to the 2N5885.
  • MJ15003: A high-voltage NPN transistor suitable for power switching applications.
  • TIP31C: This is a general-purpose NPN transistor capable of handling moderate power levels.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS N Mounting Style Through Hole
Package / Case TO-204-2 Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 60 V
Collector- Base Voltage VCBO 60 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 1 V Maximum DC Collector Current 25 A
Pd - Power Dissipation 200 W Gain Bandwidth Product fT 4 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Brand onsemi Continuous Collector Current 25 A
DC Collector/Base Gain hfe Min 35 Height 8.51 mm
Length 39.37 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 100 Subcategory Transistors
Technology Si Width 26.67 mm
Unit Weight 0.056438 oz

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