• NTMFS4C022NT1G SO-8FL-4
NTMFS4C022NT1G SO-8FL-4

NTMFS4C022NT1G

Trans MOSFET N-CH 30V 30A 5-Pin SO-FL EP T/R

Quantity Unit Price(USD) Ext. Price
1 $0.777 $0.78
10 $0.645 $6.45
30 $0.580 $17.40
100 $0.515 $51.50
500 $0.444 $222.00
1500 $0.424 $636.00

Inventory:8,130

*The price is for reference only.
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Overview of NTMFS4C022NT1G

The NTMFS4C022NT1G is an N-channel Power MOSFET designed for high-performance switching applications in power supplies, motor control, and other power management systems. It offers low on-state resistance and high switching speed, making it ideal for applications that require efficient power handling.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTMFS4C022NT1G MOSFET for a visual representation.

Key Features

  • High Performance MOSFET: The NTMFS4C022NT1G offers high efficiency and reliability in power switching applications.
  • Low On-State Resistance: With a low RDS(on) value, this MOSFET minimizes power loss and heat generation.
  • Fast Switching Speed: The high-speed switching capability of this MOSFET ensures quick response in power control circuits.
  • Robust Design: Built to withstand high currents and voltages, providing durability in demanding operating conditions.
  • Compact Package: Available in a space-saving package, making it suitable for compact electronic designs.

Note: For detailed technical specifications, please refer to the NTMFS4C022NT1G datasheet.

Application

  • Power Supplies: Ideal for use in power supply units for efficient power management.
  • Motor Control: Suitable for motor control circuits to regulate motor speed and power consumption.
  • Power Management Systems: Used in various power management systems for reliable switching and control.

Functionality

The NTMFS4C022NT1G N-channel Power MOSFET is designed to handle high power loads with low resistance and fast switching speed. It provides efficient power management and control in electronic systems.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching the MOSFET.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins to the load circuit for power handling.
  • Heat Management: Ensure proper heat sinking to dissipate heat generated during operation for optimal performance.

Equivalent

For similar functionalities, consider these alternatives to the NTMFS4C022NT1G:

  • NTMFS4C024NT1G: A similar N-channel Power MOSFET with slightly different specifications or package options from the same manufacturer.
  • IRF3205: An alternative N-channel MOSFET with comparable performance characteristics for power switching applications.

NTMFS4C022NT1G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 136A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.2 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3071 pF @ 15 V Power Dissipation (Max) 3.1W (Ta), 64W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case SO-8FL-4
Base Product Number NTMFS4 Manufacturer onsemi
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 136 A Rds On - Drain-Source Resistance 1.7 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.2 V
Qg - Gate Charge 45.2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 3.1 W
Channel Mode Enhancement Series NTMFS4C022N
Brand onsemi Configuration Single
Product Type MOSFET Factory Pack Quantity 1500
Subcategory MOSFETs Unit Weight 0.026455 oz

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