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VS-GB50NA120UX

Transistor IGBT module for industrial applications

Inventory:5,198

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Overview of VS-GB50NA120UX

The VS-GB50NA120UX is a high-power, fast switching IGBT (Insulated Gate Bipolar Transistor) module designed for high-performance and energy-efficient power electronic systems. It is engineered to handle high current and voltage levels, making it suitable for applications requiring robust power handling capabilities.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector(U): Connects to the positive terminal of the high-voltage power supply
  • Emitter(V): Connects to the load or output terminal
  • Gates(W): Input for controlling the switching action of the IGBT
  • Emitter(V): Connects to the load or output terminal
  • Collector(U): Connects to the positive terminal of the high-voltage power supply
  • Gates(W): Input for controlling the switching action of the IGBT

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the VS-GB50NA120UX IGBT module for a visual representation.

Key Features

  • High Power Handling: Capable of handling high current and voltage levels for power applications.
  • Fast Switching: Provides fast switching times for efficient power control and regulation.
  • Robust Construction: Designed for rugged and reliable performance in demanding environments.
  • Low Saturation Voltage: Offers low voltage drop during conduction for minimal power loss.
  • Integrated Gate Resistor: Includes an integrated gate resistor for simplified external circuitry.

Note: For detailed technical specifications, please refer to the VS-GB50NA120UX datasheet.

Application

  • Industrial Motor Drives: Ideal for use in motor control systems requiring high-power switching.
  • Power Inverters: Suitable for power inverter applications in renewable energy systems and industrial equipment.
  • Switching Power Supplies: Used in high-power switching power supply units for efficient power conversion.

Functionality

The VS-GB50NA120UX is an Insulated Gate Bipolar Transistor module designed to handle high power levels and provide fast switching for efficient power control in various applications.

Usage Guide

  • Connection: Connect the collector, emitter, and gate terminals to their respective components as per the application's circuit design.
  • Gate Control: Apply appropriate control signals to the gate terminal for regulating the IGBT switching action.

Frequently Asked Questions

Q: Can the VS-GB50NA120UX operate at high temperatures?
A: The VS-GB50NA120UX is designed to operate at elevated temperatures, making it suitable for industrial applications with thermal demands.

Equivalent

For similar functionalities, consider these alternatives to the VS-GB50NA120UX:

  • IXYS IXGH50N60C2D1: An IGBT module with comparable power handling and switching characteristics
  • Infineon EconoDUAL™ 3 IGBT Module: Offers similar power capabilities and integrated features for power applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS Details
Configuration Single Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 3.22 V Continuous Collector Current at 25 C 84 A
Gate-Emitter Leakage Current 200 nA Pd - Power Dissipation 431 W
Package / Case SOT-227-4 Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Brand Vishay Semiconductors
Maximum Gate Emitter Voltage 20 V Mounting Style SMD/SMT
Product Type IGBT Modules Factory Pack Quantity 180
Subcategory IGBTs Tradename HEXFRED
Unit Weight 1.058219 oz

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