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TPWR8503NL,L1Q

MOSFET N-CH Mosfet 30V 150A 8DSOP

Quantity Unit Price(USD) Ext. Price
1 $0.567 $0.57
10 $0.557 $5.57
30 $0.548 $16.44
100 $0.540 $54.00

Inventory:8,596

*The price is for reference only.
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Overview of TPWR8503NL,L1Q

N-Channel 30 V 150A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TPWR8503NL Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 15 V
Power Dissipation (Max) 800mW (Ta), 142W (Tc) Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-DSOP Advance
Package / Case DSOP-8 Base Product Number TPWR8503
Manufacturer Toshiba Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 150 A
Rds On - Drain-Source Resistance 1 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.3 V Qg - Gate Charge 74 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 142 W Channel Mode Enhancement
Tradename U-MOSVIII-H Brand Toshiba
Configuration Single Fall Time 15 ns
Height 0.73 mm Length 5 mm
Product Type MOSFET Rise Time 9.6 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 89 ns
Typical Turn-On Delay Time 23 ns Width 5 mm
Unit Weight 0.003668 oz

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