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TPW2R508NH,L1Q

Robust and reliable MOSFET technology for efficient energy transfer

Inventory:8,606

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Overview of TPW2R508NH,L1Q

N-Channel 75 V 150A (Ta) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TPW2R508NH Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id) @ 25°C 150A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 37.5 V
Power Dissipation (Max) 800mW (Ta), 142W (Tc) Operating Temperature 150°C
Mounting Type Surface Mount Supplier Device Package 8-DSOP Advance
Package / Case DSOP-8 Manufacturer Toshiba
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 75 V
Id - Continuous Drain Current 170 A Rds On - Drain-Source Resistance 2.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 72 nC Maximum Operating Temperature + 150 C
Pd - Power Dissipation 142 W Channel Mode Enhancement
Tradename U-MOSVIII-H Brand Toshiba
Configuration Single Fall Time 15 ns
Product Type MOSFET Rise Time 11 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 56 ns
Typical Turn-On Delay Time 30 ns Unit Weight 0.003668 oz

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