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TPW1500CNH,L1Q

MOSFET POWER MOSFET TRANSISTOR

Inventory:5,916

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Overview of TPW1500CNH,L1Q

N-Channel 150 V 38A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TPW1500CNH Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 75 V
Power Dissipation (Max) 800mW (Ta), 142W (Tc) Operating Temperature 150°C
Mounting Type Surface Mount Supplier Device Package 8-DSOP Advance
Package / Case DSOP-8 Manufacturer Toshiba
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 50 A Rds On - Drain-Source Resistance 15.4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 22 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 142 W
Channel Mode Enhancement Tradename U-MOSVIII-H
Brand Toshiba Configuration Single
Fall Time 12 ns Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 36 ns Typical Turn-On Delay Time 20 ns
Unit Weight 0.003668 oz

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