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STF24N65M2

Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) TO-220FP Tube

Inventory:4,271

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Overview of STF24N65M2

The STF24N65M2 Power MOSFETs incorporate MDmesh™ M2 technology to provide superior performance in high efficiency converters. Their strip layout and enhanced vertical structure contribute to low on-resistance and optimized switching characteristics, making them a reliable choice for demanding applications. With a focus on efficiency and performance, these N-channel MOSFETs are well-suited for use in industrial and consumer electronics, offering designers and engineers a versatile and dependable solution for their power management needs

Key Features

  • Fast switching and high efficiency
  • Suitable for modern power converters
  • Fully avalanche tested

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF24N65M2 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description TO-220FP, 3 PIN
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 650 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 650 V
Drain Current-Max (Abs) (ID) 16 A Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.23 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W Pulsed Drain Current-Max (IDM) 64 A
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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