STF24N65M2
Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) TO-220FP Tube
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Part Number : STF24N65M2
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Package/Case : TO-220FP
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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Datesheet : STF24N65M2 DataSheet (PDF)
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Series : STF24N65M2
Overview of STF24N65M2
The STF24N65M2 Power MOSFETs incorporate MDmesh™ M2 technology to provide superior performance in high efficiency converters. Their strip layout and enhanced vertical structure contribute to low on-resistance and optimized switching characteristics, making them a reliable choice for demanding applications. With a focus on efficiency and performance, these N-channel MOSFETs are well-suited for use in industrial and consumer electronics, offering designers and engineers a versatile and dependable solution for their power management needs
Key Features
- Fast switching and high efficiency
- Suitable for modern power converters
- Fully avalanche tested
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STF24N65M2 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | TO-220FP, 3 PIN |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 650 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (Abs) (ID) | 16 A | Drain Current-Max (ID) | 16 A |
Drain-source On Resistance-Max | 0.23 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 30 W | Pulsed Drain Current-Max (IDM) | 64 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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