• packageimg
packageimg

IRF640SPBF

High-power N-channel MOSFET capable of handling 18A current at 200V voltage

Quantity Unit Price(USD) Ext. Price
1 $1.211 $1.21
10 $1.024 $10.24
30 $0.920 $27.60
100 $0.804 $80.40
500 $0.753 $376.50
1000 $0.730 $730.00

Inventory:4,443

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IRF640SPBF using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IRF640SPBF

The IRF640SPBF is a power MOSFET transistor designed for high-power switching applications.It features a low on-state resistance and high switching speed,making it ideal for use in power supplies,motor controls,and inverters.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF640SPBF MOSFET for a visual representation.

Key Features

  • High Power Handling Capability:The IRF640SPBF can handle high power levels,allowing for efficient power switching.
  • Low On-State Resistance:With a low RDS(on),this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed:Featuring a high switching speed,this transistor ensures rapid switching transitions for improved circuit performance.
  • High Temperature Resistance:The IRF640SPBF is designed to withstand high temperatures,ensuring reliable operation in demanding environments.

Note:For detailed technical specifications,please refer to the IRF640SPBF datasheet.

Application

  • Power Supplies:Suitable for use in power supply circuits for voltage regulation and power switching applications.
  • Motor Controls:Used in motor control circuits for driving and controlling the speed of motors efficiently.
  • Inverters:Ideal for inverter circuits converting DC power to AC power in various applications.

Functionality

The IRF640SPBF power MOSFET transistor is designed for high-power switching applications.It provides efficient power switching capabilities for a wide range of electronic systems.

Usage Guide

  • Gate Drive:Apply the proper gate voltage to turn the MOSFET on and off effectively.
  • Heat Management:Ensure proper heat sinking to dissipate heat generated during high-power operation.

Frequently Asked Questions

Q:Can the IRF640SPBF be used in high-temperature environments?
A:Yes,the IRF640SPBF is designed to withstand high temperatures for reliable operation.

Equivalent

For similar functionalities,consider these alternatives to the IRF640SPBF:

  • IRF740:A power MOSFET transistor with comparable specifications to the IRF640SPBF and suitable for similar applications.
  • IRFZ44N:This is another power MOSFET transistor offering similar performance characteristics to the IRF640SPBF.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V Id - Continuous Drain Current 18 A
Rds On - Drain-Source Resistance 180 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 70 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W Channel Mode Enhancement
Series IRF Brand Vishay Semiconductors
Configuration Single Fall Time 36 ns
Forward Transconductance - Min 6.7 S Product Type MOSFET
Rise Time 51 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 14 ns
Unit Weight 0.139332 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

CM300DY-28H

CM300DY-28H

Dual 1400V 300A H-Series IGBT Module
SIA975DJ-T1-GE3

SIA975DJ-T1-GE3

12 V Dual P-Channel MOSFET (D-S)
PHN210T

PHN210T

N-Channel Metal-oxide Semiconductor FET
AOD5N50

AOD5N50

With a voltage rating of 500V, a continuous drain current of 3
BSP52T1G

BSP52T1G

NPN Small-Signal Darlington Transistor
CSD25404Q3T

CSD25404Q3T

Trans MOSFET P-CH 20V 60A 8-Pin VSON-CLIP EP T/R
CSD88599Q5DCT

CSD88599Q5DCT

RoHS Compliant Gate Drive ICs
ZXMP2120FFTA

ZXMP2120FFTA

The ZXMP2120FFTA MOSFET is a P-channel device suitable for various applications
SIR826DP-T1-GE3

SIR826DP-T1-GE3

80V N-Channel Transistor MOSFET with a current rating of 25A designed for PowerPAK SO package in Tape and Reel form
SIZ340DT-T1-GE3

SIZ340DT-T1-GE3

MOSFET Dual N-Channel with 30V and 30/40A PowerPAIR8EP