SSM6N815R,LF
SSM6N815R,LF - ROHS compliant N-Channel MOSFET with 2 in a package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.329 | $0.33 |
200 | $0.132 | $26.40 |
500 | $0.127 | $63.50 |
1000 | $0.125 | $125.00 |
Inventory:5,625
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Part Number : SSM6N815R,LF
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Package/Case : TSOP-6
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Brands : Toshiba
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Components Categories : FET, MOSFET Arrays
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Datesheet : SSM6N815R,LF DataSheet (PDF)
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Series : SSM6N815
Overview of SSM6N815R,LF
Mosfet Array 100V 2A (Ta) 1.8W (Ta) Surface Mount 6-TSOP-F
Key Features
- Fast rise time performance
- Low capacitance
- High ripple current rating
Application
- Marine navigation
- Drone technology
- Healthcare devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 2 A | Rds On - Drain-Source Resistance | 84 mOhms, 84 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 3.1 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.4 W |
Channel Mode | Enhancement | Tradename | U-MOSVIII-H |
Series | SSM6N815 | Brand | Toshiba |
Configuration | Dual | Forward Transconductance - Min | 4.8 S, 4.8 S |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Typical Turn-Off Delay Time | 21 ns, 21 ns | Typical Turn-On Delay Time | 7.5 ns, 7.5 ns |
Unit Weight | 0.000705 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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