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IXFN48N50U2

SOT-227B-packaged N-channel MOSFET capable of handling 500 volts and 48 amps

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Overview of IXFN48N50U2

The IXFN48N50U2 is a high-power MOSFET transistor designed for high-performance switching applications in power supply, motor control, and inverter systems. It features a high current rating and low on-state resistance, making it suitable for high-efficiency and high-power-density designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Control pin for turning the MOSFET on and off
  • Drain: Output terminal for the load current

Circuit Diagram

An illustrative circuit diagram showcasing the implementation and operation of the IXFN48N50U2 MOSFET for easy understanding.

Key Features

  • High Current Rating: The IXFN48N50U2 offers a high continuous drain current, enabling it to handle large power loads.
  • Low On-State Resistance: With low RDS(on), the MOSFET minimizes power loss and heat generation in high-current applications.
  • High Switching Speed: This MOSFET provides fast switching characteristics, suitable for high-frequency applications.
  • High Power Density: Its performance characteristics contribute to high-power-density designs, ideal for space-constrained applications.
  • Robust Construction: The IXFN48N50U2 is built to withstand high voltages and harsh operating conditions, ensuring long-term reliability.

Note: Refer to the IXFN48N50U2 datasheet for comprehensive technical specifications.

Application

  • Power Supplies: Suitable for use in high-power and high-efficiency power supply systems.
  • Motor Control: Ideal for motor drives and control circuits requiring high-current switching capabilities.
  • Inverter Systems: The IXFN48N50U2 is suitable for inverter applications in various power electronics systems.

Functionality

The IXFN48N50U2 MOSFET is designed to facilitate high-current switching operations, offering efficient power control and management in diverse electronic applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminal to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load to the drain terminal to enable current flow based on the gate signal.
  • Common Connection: The source terminal serves as the common connection point for input and output circuits.

Frequently Asked Questions

Q: Is the IXFN48N50U2 suitable for high-frequency switching applications?
A: Yes, the fast switching speed of the IXFN48N50U2 makes it suitable for high-frequency switching requirements in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the IXFN48N50U2:

  • IXFN55N50: This MOSFET offers similar high-power switching capabilities with slightly different performance characteristics.
  • IRF840: A power MOSFET option suitable for high-current switching applications in various electronic systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Discrete Semiconductor Modules RoHS Details
Product Power MOSFET Modules Technology Si
Vgs - Gate-Source Voltage - 20 V, + 20 V Mounting Style Chassis Mount
Package / Case SOT-227-4 Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Series HiPerFET
Brand IXYS Configuration Single
Fall Time 30 ns Height 9.6 mm
Id - Continuous Drain Current 48 A Length 38.2 mm
Number of Channels 1 Channel Pd - Power Dissipation 520 W
Product Type Discrete Semiconductor Modules Rds On - Drain-Source Resistance 100 mOhms
Rise Time 60 ns Factory Pack Quantity 10
Subcategory Discrete Semiconductor Modules Transistor Polarity N-Channel
Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 30 ns
Vds - Drain-Source Breakdown Voltage 500 V Width 25.07 mm
Unit Weight 1.058219 oz

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