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IXTK60N50L2

MOSFET with a 60 Amps and 500V rating

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Overview of IXTK60N50L2

The IXTK60N50L2 is a high-power IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. This IGBT features a voltage rating of 500V and a current rating of 60A, making it suitable for various power electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Current flows out through this terminal.
  • Emitter (E): Current returns through this terminal.
  • GATE: Input terminal for controlling the IGBT switching.
  • VCE: Voltage terminal between Collector and Emitter.
  • VGE: Voltage terminal between Gate and Emitter.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTK60N50L2 IGBT for a visual representation.

Key Features

  • High Voltage Rating: Operates at 500V, suitable for high-power applications.
  • High Current Capability: Handles up to 60A of current, enabling efficient power switching.
  • Low Saturation Voltage: Provides low conduction losses for higher efficiency.
  • Fast Switching Speed: Ensures rapid switching for improved performance in power circuits.
  • Temperature Stability: Maintains stable operation over a wide temperature range.

Note: For detailed technical specifications, please refer to the IXTK60N50L2 datasheet.

Application

  • Power Inverters: Ideal for use in power inverters and converters.
  • Motor Drives: Suitable for motor drive applications requiring high-power switching.
  • Switching Power Supplies: Used in switching power supply designs for efficient power conversion.

Functionality

The IXTK60N50L2 is a high-power IGBT that enables efficient and reliable power switching in various electronic applications. It offers high voltage and current handling capabilities for demanding power circuits.

Usage Guide

  • Power Connections: Connect the Collector and Emitter terminals to the load and power supply accordingly.
  • Gating Control: Apply the appropriate voltage levels to the GATE terminal for controlling IGBT switching.
  • Voltage Ratings: Ensure that the voltage ratings of the IGBT align with the system requirements.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXTK60N50L2?
A: The IXTK60N50L2 has a voltage rating of 500V, allowing for high-power applications.

Q: Can the IXTK60N50L2 be used in motor control applications?
A: Yes, the IXTK60N50L2 is suitable for motor drive applications requiring high current handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IXTK60N50L2:

  • IXTK55N50L2: A comparable high-power IGBT with slightly different specifications and performance characteristics.
  • IXTK65N50L2: This IGBT offers similar voltage and current ratings, providing alternative options for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.1
Continuous Drain Current @ 25 ℃ (A) 60 Gate Charge (nC) 610
Input Capacitance, CISS (pF) 24000 Thermal resistance [junction-case] (K/W) 0.13
Configuration Single Package Type TO-264
Typical Reverse Recovery Time (ns) 980 Power Dissipation (W) 960
Sample Request Yes Check Stock Yes

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