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SQ3426AEEV-T1_GE3

MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified

Inventory:6,119

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Overview of SQ3426AEEV-T1_GE3

Featuring a compact PowerPAK SO-8 package, the SQ3426AEEV-T1_GE3 MOSFET offers enhanced thermal performance and power dissipation capabilities, making it a versatile choice for a wide range of applications. Additionally, this MOSFET is RoHS-compliant and halogen-free, meeting environmental standards and promoting sustainability in electronic design

Key Features

  • The SQ34AEEV has an integrated bootstrap diode for reduced component count
  • This device features a low on-resistance power stage for high efficiency
  • It is designed for reliable operation with thermal shutdown and overcurrent protection

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP-6 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 7 A Rds On - Drain-Source Resistance 32 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 11.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 5 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename TrenchFET Series SQ
Brand Vishay / Siliconix Configuration Single
Fall Time 4 ns Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 7 ns
Part # Aliases SQ3426AEEV-T1_BE3 Unit Weight 0.000705 oz

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    Parts Quality Guarantee: 365 days

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