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SIHH26N60EF-T1-GE3

SIHH26N60EF-T1-GE3 Vishay MOSFETs Transistor N-CH 600V 24A 5-Pin PowerPAK EP T/R - Arrow.com

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Overview of SIHH26N60EF-T1-GE3

N-Channel 600 V 24A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

Key Features

  • Completely lead (Pb)-free device
  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Reduced switching and conduction losses
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)

    • Application

    • oServer and telecom power supplies
    • oSwitch mode power supplies (SMPS)
    • oPower factor correction power supplies (PFC)
    • oLighting
    • oHigh-intensity discharge (HID)
    • oFluorescent ballast lighting
    • oIndustrial
    • oWelding
    • oInduction heating
    • oMotor drives
    • oBattery chargers
    • oRenewable energy
    • oSolar (PV inverters)

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Status Active FET Type N-Channel
    Technology Si Drain to Source Voltage (Vdss) 600 V
    Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 141mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V Vgs (Max) ±30V
    Input Capacitance (Ciss) (Max) @ Vds 2744 pF @ 100 V Power Dissipation (Max) 202W (Tc)
    Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
    Supplier Device Package PowerPAK® 8 x 8 Package / Case PowerPAK-8x8-4
    Base Product Number SIHH26 Manufacturer Vishay
    Product Category MOSFET RoHS Details
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
    Id - Continuous Drain Current 25 A Rds On - Drain-Source Resistance 117 mOhms
    Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
    Qg - Gate Charge 77 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 202 W
    Channel Mode Enhancement Series EF
    Brand Vishay / Siliconix Configuration Single
    Fall Time 45 ns Product Type MOSFET
    Rise Time 54 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Typical Turn-Off Delay Time 80 ns
    Typical Turn-On Delay Time 28 ns Unit Weight 0.001764 oz

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      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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