SIHH24N65EF-T1-GE3
SIHH24N65EF-T1-GE3 Vishay MOSFETs Transistor N-CH 650V 23A 5-Pin PowerPAK EP T/R - Arrow.com
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $10.739 | $10.74 |
200 | $4.284 | $856.80 |
500 | $4.142 | $2,071.00 |
1000 | $4.072 | $4,072.00 |
Inventory:9,985
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Part Number : SIHH24N65EF-T1-GE3
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Package/Case : PowerPAK-8x8-4
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Brand : Vishay Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SIHH24N65EF-T1-GE3 DataSheet (PDF)
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Series : SIHH24N65EF
Overview of SIHH24N65EF-T1-GE3
N-Channel 650 V 23A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8
Key Features
Application
- oServer and telecom power supplies
- oSwitch mode power supplies (SMPS)
- oPower factor correction power supplies (PFC)
- oLighting
- oHigh-intensity discharge (HID)
- oFluorescent ballast lighting
- oIndustrial
- oWelding
- oInduction heating
- oMotor drives
- oBattery chargers
- oRenewable energy
- oSolar (PV inverters)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | FET Type | N-Channel |
Technology | Si | Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 158mOhm @ 12A, 10V | Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 100 V | Power Dissipation (Max) | 202W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 8 x 8 | Package / Case | PowerPAK-8x8-4 |
Base Product Number | SIHH24 | Manufacturer | Vishay |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 23 A | Rds On - Drain-Source Resistance | 130 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 77 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 202 W |
Channel Mode | Enhancement | Series | EF |
Brand | Vishay / Siliconix | Configuration | Single |
Fall Time | 46 ns | Height | 1 mm |
Length | 8 mm | Product Type | MOSFET |
Rise Time | 59 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 78 ns |
Typical Turn-On Delay Time | 29 ns | Width | 8 mm |
Unit Weight | 0.001764 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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