SIHG22N60E-GE3
SIHG22N60E-GE3 MOSFET: Featuring 600V Vds and 30V Vgs, encapsulated in a TO-247AC package
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Part Number : SIHG22N60E-GE3
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Package/Case : TO247-3
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Brands : Siliconix
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Components Categories : Single FETs, MOSFETs
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Datesheet : SIHG22N60E-GE3 DataSheet (PDF)
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Series : SIHG22N60E
The SIHG22N60E-GE3 is a power MOSFET designed for high-efficiency power management applications.This MOSFET offers a maximum drain-source voltage of 600V and a continuous drain current of 22A,making it suitable for power switching and amplification tasks. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram that illustrates the connections and operation of the SIHG22N60E-GE3 MOSFET for better understanding. Note:For detailed technical specifications,please refer to the SIHG22N60E-GE3 datasheet. Functionality The SIHG22N60E-GE3 power MOSFET is designed to efficiently switch high-power loads in power management circuits.It offers reliable and high-performance power control for a variety of applications. Usage Guide Q:What is the maximum drain-source voltage of the SIHG22N60E-GE3? Q:Is the SIHG22N60E-GE3 suitable for high-power applications? For similar functionalities,consider these alternatives to the SIHG22N60E-GE3:Overview of SIHG22N60E-GE3
Pinout
Circuit DiagramKey Features
Application
Frequently Asked Questions
A:The SIHG22N60E-GE3 has a maximum drain-source voltage rating of 600V.
A:Yes,the SIHG22N60E-GE3 is designed for high-power applications with its 22A continuous drain current rating.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 21 A |
Rds On - Drain-Source Resistance | 180 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 57 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 227 W | Channel Mode | Enhancement |
Series | E | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 35 ns |
Height | 20.82 mm | Length | 15.87 mm |
Product Type | MOSFET | Rise Time | 27 ns |
Factory Pack Quantity | 500 | Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 66 ns | Typical Turn-On Delay Time | 18 ns |
Width | 5.31 mm | Unit Weight | 0.211644 oz |
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