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SIHG22N60E-GE3

SIHG22N60E-GE3 MOSFET: Featuring 600V Vds and 30V Vgs, encapsulated in a TO-247AC package

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Overview of SIHG22N60E-GE3

The SIHG22N60E-GE3 is a power MOSFET designed for high-efficiency power management applications.This MOSFET offers a maximum drain-source voltage of 600V and a continuous drain current of 22A,making it suitable for power switching and amplification tasks.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source


Circuit Diagram

Include a circuit diagram that illustrates the connections and operation of the SIHG22N60E-GE3 MOSFET for better understanding.

Key Features

  • High Voltage Rating:With a maximum VDS of 600V,this MOSFET can handle high voltage applications effectively.
  • High Current Capability:The SIHG22N60E-GE3 offers a continuous drain current of 22A,suitable for power switching operations.
  • Low On-Resistance:Features low on-state resistance for efficient power management and reduced power losses.
  • Fast Switching Speed:Provides fast switching characteristics,allowing for rapid power control in applications.
  • Temperature Stability:Designed for stable performance across a wide temperature range for reliable operation.

Note:For detailed technical specifications,please refer to the SIHG22N60E-GE3 datasheet.

Application

  • Switching Power Supplies:Ideal for use in switching power supply applications due to its high voltage and current handling capabilities.
  • Motor Control:Suitable for motor control applications where high voltage switching is required.
  • Inverters:Can be used in inverter circuits for converting DC power to AC power in various electronic systems.

Functionality

The SIHG22N60E-GE3 power MOSFET is designed to efficiently switch high-power loads in power management circuits.It offers reliable and high-performance power control for a variety of applications.

Usage Guide

  • Gate Voltage:Apply the appropriate gate-source voltage to control the switching behavior of the MOSFET.
  • Load Connections:Connect the load between the drain and source terminals of the MOSFET for power switching operations.
  • Heat Management:Ensure proper heat sinking to dissipate heat generated during operation and maintain device reliability.

Frequently Asked Questions

Q:What is the maximum drain-source voltage of the SIHG22N60E-GE3?
A:The SIHG22N60E-GE3 has a maximum drain-source voltage rating of 600V.

Q:Is the SIHG22N60E-GE3 suitable for high-power applications?
A:Yes,the SIHG22N60E-GE3 is designed for high-power applications with its 22A continuous drain current rating.

Equivalent

For similar functionalities,consider these alternatives to the SIHG22N60E-GE3:

  • FQP27P06:A power MOSFET offering similar performance characteristics with a slightly different voltage/current rating.
  • IRF840:This is another power MOSFET option with comparable specifications to the SIHG22N60E-GE3 for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 21 A
Rds On - Drain-Source Resistance 180 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 57 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 227 W Channel Mode Enhancement
Series E Brand Vishay Semiconductors
Configuration Single Fall Time 35 ns
Height 20.82 mm Length 15.87 mm
Product Type MOSFET Rise Time 27 ns
Factory Pack Quantity 500 Subcategory MOSFETs
Typical Turn-Off Delay Time 66 ns Typical Turn-On Delay Time 18 ns
Width 5.31 mm Unit Weight 0.211644 oz

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