SI7905DN-T1-GE3
MOSFET SI7923DN-GE3 suggested as a substitute for SI7905DN-T1-GE3
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Part Number : SI7905DN-T1-GE3
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Package/Case : PowerPAK1212-8
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Brand : Siliconix
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Components Classification : FET, MOSFET Arrays
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Datesheet : SI7905DN-T1-GE3 DataSheet (PDF)
The SI7905DN-T1-GE3 is a negative voltage regulator IC designed for use in various electronic applications. This IC provides a stable negative output voltage and features low dropout voltage and high output current capability, making it suitable for power management purposes. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram that demonstrates the connections and operation of the SI7905DN-T1-GE3 IC for visual reference. Note: For detailed technical specifications, please refer to the SI7905DN-T1-GE3 datasheet. Functionality The SI7905DN-T1-GE3 is a negative voltage regulator IC that ensures a constant negative output voltage, enabling reliable power supply solutions for various electronic systems. Usage Guide Q: Is thermal shutdown protection necessary for the SI7905DN-T1-GE3? For similar functionalities, consider these alternatives to the SI7905DN-T1-GE3:Overview of SI7905DN-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the thermal shutdown feature helps protect the IC from overheating under excessive load or high ambient temperature conditions.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-1212-8 | Transistor Polarity | P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 6 A | Rds On - Drain-Source Resistance | 60 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 20 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 20.8 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Dual | Fall Time | 10 ns |
Forward Transconductance - Min | 25 S | Product Type | MOSFET |
Rise Time | 13 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 P-Channel |
Typical Turn-Off Delay Time | 26 ns | Typical Turn-On Delay Time | 6 ns |
Part # Aliases | SI7905DN-GE3 | Unit Weight | 0.032487 oz |
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Warranty, Returns, and Additional Information
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