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SI4126DY-T1-GE3

MOSFET N-CH 30V 39A 8-SOIC

Quantity Unit Price(USD) Ext. Price
1 $1.342 $1.34
10 $1.151 $11.51
30 $1.044 $31.32
100 $0.924 $92.40
500 $0.871 $435.50
1000 $0.848 $848.00

Inventory:8,482

*The price is for reference only.
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Overview of SI4126DY-T1-GE3

The SI4126DY-T1-GE3 is a dual P-channel MOSFET IC designed for use in power management and switching applications. This IC features high efficiency and low on-resistance, making it suitable for various power electronics circuits and designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate terminal for MOSFET 1
  • SOURCE1: Source terminal for MOSFET 1
  • DRAIN1: Drain terminal for MOSFET 1
  • GATE2: Gate terminal for MOSFET 2
  • SOURCE2: Source terminal for MOSFET 2
  • DRAIN2: Drain terminal for MOSFET 2
  • VSS: Ground connection
  • VDD: Positive power supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4126DY-T1-GE3 IC for a visual representation.

Key Features

  • Dual P-Channel MOSFET IC: Provides two P-channel MOSFETs in a single package for power switching applications.
  • Low On-Resistance: The SI4126DY-T1-GE3 offers low on-resistance, resulting in minimal power loss and high efficiency.
  • High Efficiency: With its efficient design, this IC minimizes power dissipation and improves overall system performance.
  • Fast Switching Speed: The MOSFETs in this IC have fast switching speeds, ideal for applications requiring rapid power switching.
  • Compact Package: Available in a compact form factor, the SI4126DY-T1-GE3 is space-saving and suitable for small-scale designs.

Note: For detailed technical specifications, please refer to the SI4126DY-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management applications such as voltage regulation and power switching.
  • Motor Control: Suitable for motor control circuits requiring efficient power switching capabilities.
  • Battery Protection: Used in battery protection circuits to control power flow and prevent overcurrent situations.

Functionality

The SI4126DY-T1-GE3 is a dual P-channel MOSFET IC designed to efficiently switch power in various electronic circuits. It provides reliable performance and high efficiency in power management applications.

Usage Guide

  • Power Supply: Connect VDD (Pin 7) to the positive power supply and VSS (Pin 8) to ground.
  • GATE Connection: Apply appropriate gate voltage signals to GATE1 and GATE2 to control the MOSFET switching.
  • Load Connection: Connect the load between DRAIN1 and SOURCE1 for MOSFET 1, and between DRAIN2 and SOURCE2 for MOSFET 2.

Frequently Asked Questions

Q: Is the SI4126DY-T1-GE3 suitable for high-frequency switching applications?
A: Yes, the SI4126DY-T1-GE3 features fast switching speeds, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the SI4126DY-T1-GE3:

  • FDS8880: This is a dual P-channel MOSFET IC with comparable performance characteristics to the SI4126DY-T1-GE3.
  • SI4435DY: Another dual P-channel MOSFET IC offering similar functionality and power switching capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TrenchFET® Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4405 pF @ 15 V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) Base Product Number SI4126

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