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SI3483CDV-T1-GE3

P-Channel Silicon MOSFET

Quantity Unit Price(USD) Ext. Price
1 $0.437 $0.44
10 $0.364 $3.64
30 $0.333 $9.99
100 $0.296 $29.60
500 $0.251 $125.50
1000 $0.241 $241.00

Inventory:7,730

*The price is for reference only.
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Overview of SI3483CDV-T1-GE3

The SI3483CDV-T1-GE3 is a high-speed MOSFET driver IC designed for use in power conversion and motor control applications. This IC offers fast switching speeds and low drive impedance, making it ideal for high-frequency and high-efficiency power management systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Positive Power Supply
  • GND: Ground connection
  • EN: Enable Pin
  • IN: Input Pin
  • OUT: Output Pin
  • COMP: Compensation Pin
  • FB: Feedback Pin
  • VSENSE: Voltage Sense Pin
  • SS/UVLO: Soft-Start/Undervoltage Lockout Pin
  • OC: Overcurrent Protection Pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI3483CDV-T1-GE3 IC for a visual representation.

Key Features

  • High-Speed MOSFET Driver: The SI3483CDV-T1-GE3 provides fast switching speeds for efficient power management.
  • Low Drive Impedance: This IC offers low drive impedance, reducing power losses and improving overall system efficiency.
  • Enable Pin: Features an enable pin for easily controlling the operation of the driver IC.
  • Overcurrent Protection: Includes overcurrent protection functionality to safeguard the system from excessive currents.
  • Soft-Start/Undervoltage Lockout: Offers soft-start and undervoltage lockout features for smooth power-up sequences and protection against undervoltage conditions.

Note: For detailed technical specifications, please refer to the SI3483CDV-T1-GE3 datasheet.

Application

  • Power Conversion: Suitable for power conversion applications requiring high-speed and efficient switching.
  • Motor Control: Ideal for motor control systems where high-speed switching is essential for optimal performance.
  • Power Management: Used in various power management systems to enhance efficiency and reliability.

Functionality

The SI3483CDV-T1-GE3 is a high-speed MOSFET driver IC that enables fast and efficient switching in power conversion and motor control applications. It offers reliability and performance for critical power management tasks.

Usage Guide

  • Power Supply: Connect VDD (Pin 1) to the positive power supply and GND (Pin 2) to ground.
  • Input/Output Connections: Connect the input signal to the IN pin and the load to the OUT pin for proper operation.
  • Enable Control: Use the EN pin to enable or disable the driver IC as needed.

Frequently Asked Questions

Q: Can the SI3483CDV-T1-GE3 be used in high-frequency applications?
A: Yes, the SI3483CDV-T1-GE3 is designed for high-speed operation and is suitable for high-frequency applications requiring efficient switching.

Q: Does the SI3483CDV-T1-GE3 have overcurrent protection?
A: Yes, this IC features overcurrent protection functionality to protect the system from excessive currents.

Equivalent

For similar functionalities, consider these alternatives to the SI3483CDV-T1-GE3:

  • SI8231BB-D-IS: A high-speed MOSFET driver IC from Silicon Labs offering comparable performance and features to the SI3483CDV-T1-GE3.
  • IR2184S: This IC from Infineon Technologies provides high-speed switching capabilities for power conversion applications, similar to the SI3483CDV-T1-GE3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case TSOP-6
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 34 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 33 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 4.2 W Channel Mode Enhancement
Tradename TrenchFET Series SI3
Brand Vishay Semiconductors Configuration Single
Fall Time 15 ns Product Type MOSFET
Rise Time 135 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 45 ns
Part # Aliases SI3483CDV-T1-BE3 SI3483CDV-GE3 Unit Weight 0.000705 oz

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