• packageimg
packageimg

SI3476DV-T1-BE3

MOSFET N-CHANNEL 80-V (D-S)

Quantity Unit Price(USD) Ext. Price
1 $0.350 $0.35
200 $0.139 $27.80
500 $0.135 $67.50
1000 $0.132 $132.00

Inventory:8,116

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SI3476DV-T1-BE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SI3476DV-T1-BE3

N-Channel 80 V 3.5A (Ta), 4.6A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 93mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 40 V Power Dissipation (Max) 2W (Ta), 3.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 6-TSOP Package / Case TSOP-6
Manufacturer Vishay Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Current 4.6 A
Rds On - Drain-Source Resistance 93 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 2.6 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.6 W Channel Mode Enhancement
Brand Vishay / Siliconix Configuration Single
Fall Time 15 ns Product Type MOSFET
Rise Time 50 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 14 ns Typical Turn-On Delay Time 26 ns
Part # Aliases SI3476DV-T1-GE3 Unit Weight 0.000705 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

SI4401BDY-T1-E3

SI4401BDY-T1-E3

Unipolar Transistor
NTMFS4C05NT1G

NTMFS4C05NT1G

5-pin surface-mount small-outline flat lead (SO-FL) package
IPB110P06LMATMA1

IPB110P06LMATMA1

Surface-mount power transistor designed for reverse polarity protection in automotive and industrial applications
2SA1797T100Q

2SA1797T100Q

A member of the 2SA1797 Series
UTV8100B

UTV8100B

NPN BJT suitable for high-frequency applications and moderate volta
IRFR220NPBF

IRFR220NPBF

IRFR220NPBF N-Channel MOSFET in Tube Packaging, Rated for 200V and 5A
IRF3706

IRF3706

N-Channel Power MOSFET IRF3706, Through Hole TO-220AB Package
BLF183XRU

BLF183XRU

High power 350W SOT-1121A MOSFETs meeting ROHS standards
MMUN2113LT1G

MMUN2113LT1G

PNP Bipolar Transistor with BRT Technology
ND2020L

ND2020L

Channel Metal-oxide Semiconductor FET Power Field-Effect Transistor