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SI3460DDV-T1-GE3

20V N-channel MOSFET capable of handling currents up to 7.9A, housed in a 6-pin TSOP package, supplied in tape and reel format

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Overview of SI3460DDV-T1-GE3

The SI3460DDV-T1-GE3 is a digital controlled variable gain amplifier (DVGA) designed for RF and IF applications. It features a wide gain control range and high linearity, making it suitable for a variety of wireless communication systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VPOS: Positive supply voltage
  • VNEG: Negative supply voltage
  • RF IN: RF input
  • RF OUT: RF output
  • VCTRL: Gain control voltage input
  • GND: Power ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI3460DDV-T1-GE3 DVGA for a visual representation.

Key Features

  • Wide Gain Control Range: Provides a wide dynamic range of gain control to accommodate various signal strengths.
  • High Linearity: Offers high linearity to minimize distortion and maintain signal integrity.
  • Low Noise Figure: The DVGA has a low noise figure, ensuring minimal addition of noise to the signal.
  • Single Supply Operation: Operates from a single supply voltage, simplifying the system design.

Note: For detailed technical specifications, please refer to the SI3460DDV-T1-GE3 datasheet.

Application

  • Wireless Communication Systems: Ideal for use in RF and IF stages of wireless communication systems.
  • Radar Systems: Suitable for radar systems requiring variable gain amplification.
  • Medical Imaging: Used in medical imaging equipment for signal amplification and conditioning.

Functionality

The SI3460DDV-T1-GE3 is a digital controlled variable gain amplifier designed to provide precise gain control and amplification for RF and IF signals. It ensures signal fidelity and optimum performance in wireless communication and signal processing applications.

Usage Guide

  • Power Supply: Connect VPOS (Pin 1) to the positive supply voltage and VNEG (Pin 2) to the negative supply voltage if applicable.
  • RF Connections: Connect the RF input (RF IN) and RF output (RF OUT) to the respective RF signal paths.
  • Gain Control: Apply the desired gain control voltage to the VCTRL (Pin 5) input to adjust the amplification level.

Frequently Asked Questions

Q: Can the SI3460DDV-T1-GE3 operate from a single supply voltage?
A: Yes, the SI3460DDV-T1-GE3 is designed for single supply operation to simplify system integration and power management.

Equivalent

For similar functionalities, consider these alternatives to the SI3460DDV-T1-GE3:

  • ADL5566: A digital controlled variable gain amplifier with similar features and performance characteristics.
  • HMC987: This is a DVGA from Analog Devices offering comparable gain control and linearity specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP-6 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 7.9 A Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 18 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.7 W
Channel Mode Enhancement Tradename TrenchFET
Series SI3 Brand Vishay Semiconductors
Configuration Single Fall Time 8 ns
Height 1.1 mm Length 3.05 mm
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 6 ns Width 1.65 mm
Part # Aliases SI3460DDV-T1-BE3 SI3460DDV-GE3 Unit Weight 0.000705 oz

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