SI3460DDV-T1-GE3
20V N-channel MOSFET capable of handling currents up to 7.9A, housed in a 6-pin TSOP package, supplied in tape and reel format
Inventory:6,210
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Part Number : SI3460DDV-T1-GE3
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Package/Case : TSOP-6
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Brands : Siliconix
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Components Categories : Single FETs, MOSFETs
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Datesheet : SI3460DDV-T1-GE3 DataSheet (PDF)
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Series : SI3460DDV
The SI3460DDV-T1-GE3 is a digital controlled variable gain amplifier (DVGA) designed for RF and IF applications. It features a wide gain control range and high linearity, making it suitable for a variety of wireless communication systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI3460DDV-T1-GE3 DVGA for a visual representation. Note: For detailed technical specifications, please refer to the SI3460DDV-T1-GE3 datasheet. Functionality The SI3460DDV-T1-GE3 is a digital controlled variable gain amplifier designed to provide precise gain control and amplification for RF and IF signals. It ensures signal fidelity and optimum performance in wireless communication and signal processing applications. Usage Guide Q: Can the SI3460DDV-T1-GE3 operate from a single supply voltage? For similar functionalities, consider these alternatives to the SI3460DDV-T1-GE3:Overview of SI3460DDV-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SI3460DDV-T1-GE3 is designed for single supply operation to simplify system integration and power management.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 7.9 A | Rds On - Drain-Source Resistance | 28 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 18 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.7 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 8 ns |
Height | 1.1 mm | Length | 3.05 mm |
Product Type | MOSFET | Rise Time | 12 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 21 ns |
Typical Turn-On Delay Time | 6 ns | Width | 1.65 mm |
Part # Aliases | SI3460DDV-T1-BE3 SI3460DDV-GE3 | Unit Weight | 0.000705 oz |
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