SI3458BDV-T1-GE3
MOSFET 60V 4.1A 3.3W 100mohm @ 10V
Inventory:5,720
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Part Number : SI3458BDV-T1-GE3
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Package/Case : TSOP-6
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SI3458BDV-T1-GE3 DataSheet (PDF)
Overview of SI3458BDV-T1-GE3
Key Features
- Rugged design for harsh environments
- Compliant with RoHS and WEEE directives
- High voltage surge withstand capability
- Safe operating area (SOA) monitored
- Temperature compensated for accurate results
- Automatic shutdown on overcurrent detection
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 4.1 A | Rds On - Drain-Source Resistance | 100 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 3.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 3.3 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Fall Time | 10 ns | Product Type | MOSFET |
Rise Time | 17 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 18 ns | Typical Turn-On Delay Time | 16 ns |
Part # Aliases | SI3458BDV-T1-BE3 SI3458BDV-GE3 | Unit Weight | 0.000705 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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