SI3457CDV-T1-GE3
Small Signal Field-Effect Transistor
Inventory:5,358
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Part Number : SI3457CDV-T1-GE3
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Package/Case : TSOP-6
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Brands : Siliconix
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Components Categories : Single FETs, MOSFETs
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Datesheet : SI3457CDV-T1-GE3 DataSheet (PDF)
The SI3457CDV-T1-GE3 is a dual-channel, high-side power switch IC designed for use in various applications such as USB power distribution, hot swapping, and general-purpose power switching. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI3457CDV-T1-GE3 IC for a visual representation. Note: For detailed technical specifications, please refer to the SI3457CDV-T1-GE3 datasheet. Functionality The SI3457CDV-T1-GE3 is a dual-channel, high-side power switch IC designed to provide efficient and reliable power switching for a wide range of applications. Usage Guide Q: Can the SI3457CDV-T1-GE3 operate with high input voltages? Q: How does the fault indicator function in the SI3457CDV-T1-GE3? For similar functionalities, consider these alternatives to the SI3457CDV-T1-GE3:Overview of SI3457CDV-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SI3457CDV-T1-GE3 is designed to operate with a wide input voltage range, making it suitable for various power distribution scenarios, including those with higher input voltages.
A: The fault indicator is used to detect overcurrent or overtemperature conditions in each channel, providing a signal to indicate potential faults in the power switching operation.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 5.1 A | Rds On - Drain-Source Resistance | 74 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 15 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 3 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 10 ns |
Height | 1.1 mm | Length | 3.05 mm |
Product Type | MOSFET | Rise Time | 13 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 5 ns | Width | 1.65 mm |
Part # Aliases | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S | Unit Weight | 0.000705 oz |
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Warranty, Returns, and Additional Information
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