SI3429EDV-T1-GE3
MOSFET -20V Vds 8V Vgs TSOP-6
Inventory:9,701
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Part Number : SI3429EDV-T1-GE3
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Package/Case : TSOP-6
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SI3429EDV-T1-GE3 DataSheet (PDF)
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Series : SI3429EDV
Overview of SI3429EDV-T1-GE3
P-Channel 20 V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TSOP-6 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 8 A | Rds On - Drain-Source Resistance | 38 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 118 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 4.2 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI3 | Brand | Vishay Semiconductors |
Configuration | Single | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Unit Weight | 0.000705 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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