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SI2393DS-T1-GE3

P-Channel 30-V (D-S) MOSFET SOT-23 , 22.7 m @ 10V m @ 7.5V 33 m @ 4.5V

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Overview of SI2393DS-T1-GE3

The SI2393DS-T1-GE3 is a P-channel MOSFET transistor designed for use in various electronic applications. This MOSFET offers high performance and reliability in switching and amplification circuits, making it suitable for a wide range of power management designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2393DS-T1-GE3 for a visual representation.

Key Features

  • P-Channel MOSFET: The SI2393DS-T1-GE3 is a P-channel MOSFET suitable for various power management applications.
  • High Performance: This MOSFET offers high performance characteristics, including low on-resistance and fast switching speeds.
  • Enhanced Power Efficiency: The SI2393DS-T1-GE3 provides efficient power management capabilities, making it ideal for battery-powered devices.
  • Compact Design: With a compact footprint, this MOSFET is space-saving and compatible with small electronic devices.
  • Temperature Stability: The SI2393DS-T1-GE3 maintains stable performance over a wide temperature range, ensuring reliable operation in diverse environments.

Note: For detailed technical specifications, please refer to the SI2393DS-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management circuits in electronic devices requiring P-channel MOSFET functionality.
  • Switching Circuits: Suitable for use in switching circuits, such as motor control, LED dimming, and load switching applications.
  • Amplification: The SI2393DS-T1-GE3 can be used for signal amplification and voltage regulation in various electronic systems.

Functionality

The SI2393DS-T1-GE3 is a high-performance P-channel MOSFET transistor that enables efficient power management and control in electronic circuits. It provides reliable switching and amplification functions for diverse applications.

Usage Guide

  • Gate Connection: Connect the Gate pin (G) to the control signal for switching operations.
  • Source and Drain Connections: Connect the Source (S) and Drain (D) pins to the appropriate circuit nodes for power control.
  • Heat Dissipation: Ensure proper heat sinking to maintain temperature stability during operation.

Frequently Asked Questions

Q: Is the SI2393DS-T1-GE3 suitable for high-frequency applications?
A: Yes, the SI2393DS-T1-GE3 is capable of operating in high-frequency circuits with appropriate design considerations.

Equivalent

For similar functionalities, consider these alternatives to the SI2393DS-T1-GE3:

  • FDS8880: An equivalent P-channel MOSFET transistor with comparable performance characteristics.
  • AOD419: This MOSFET offers similar power management capabilities and may serve as a replacement for the SI2393DS-T1-GE3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TrenchFET® Gen IV Product Status Active
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 6.1A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 22.7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25.2 nC @ 10 V
Vgs (Max) +16V, -20V Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 15 V
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 Base Product Number SI2393

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