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SI2329DS-T1-GE3

-8V Vds, 5V Vgs MOSFET in SOT-23 package

Quantity Unit Price(USD) Ext. Price
1 $0.197 $0.20
10 $0.160 $1.60
30 $0.145 $4.35
100 $0.125 $12.50
500 $0.117 $58.50
1000 $0.111 $111.00

Inventory:5,884

*The price is for reference only.
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Overview of SI2329DS-T1-GE3

The SI2329DS-T1-GE3 is a P-channel MOSFET transistor designed for use in various electronic applications. This MOSFET features a low threshold voltage and high-speed switching capabilities, making it suitable for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2329DS-T1-GE3 MOSFET for a visual representation.

Key Features

  • P-Channel MOSFET: The SI2329DS-T1-GE3 is a P-channel MOSFET suitable for power management applications.
  • Low Threshold Voltage: This MOSFET has a low threshold voltage, enabling efficient switching at low levels of applied voltage.
  • High-Speed Switching: The SI2329DS-T1-GE3 offers high-speed switching capabilities, ideal for applications requiring quick response times.
  • Low ON Resistance: With low ON resistance, this MOSFET minimizes power losses and heat dissipation during operation.
  • Compact Package: Available in a compact and space-saving package, making it suitable for small electronic devices.

Note: For detailed technical specifications, please refer to the SI2329DS-T1-GE3 datasheet.

Application

  • Power Management: Ideal for use in power management circuits, such as voltage regulators and battery protection systems.
  • Switching Circuits: Suitable for various switching applications where low power dissipation and high efficiency are required.
  • Inverter Circuits: Can be used in inverter circuits for DC-AC conversion in electronic devices.

Functionality

The SI2329DS-T1-GE3 P-channel MOSFET transistor is designed to control the flow of power in electronic circuits. Its low threshold voltage and high-speed switching characteristics make it a reliable component for power control applications.

Usage Guide

  • Connection: Connect the Gate (G), Source (S), and Drain (D) pins according to the application requirements.
  • Voltage Ratings: Ensure that the applied voltage does not exceed the maximum ratings specified in the datasheet.
  • Heat Dissipation: Proper heat sinking may be necessary to maintain the MOSFET within its temperature limits during operation.

Equivalent

For similar functionalities, consider these alternatives to the SI2329DS-T1-GE3:

  • SI2305DS-T1-GE3: A similar P-channel MOSFET with slightly different specifications but comparable performance.
  • BSS84: This is another P-channel MOSFET transistor with characteristics suitable for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 8 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 30 mOhms
Vgs - Gate-Source Voltage - 5 V, + 5 V Vgs th - Gate-Source Threshold Voltage 350 mV
Qg - Gate Charge 19.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 20 ns
Forward Transconductance - Min 2 S Product Type MOSFET
Rise Time 22 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 46 ns Typical Turn-On Delay Time 20 ns
Unit Weight 0.000282 oz

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