SI1034CX-T1-GE3

Name: SI1034CX-T1-GE3
Brand: Siliconix
Rating: 4.5 (10 reviews)

MOSFET 20V Vds 8V Vgs SC89-6 Dual N-Channel 20 V (D-S) MOSFET

Quantity	Unit Price(USD)	Ext. Price
1	$0.151	$0.15
10	$0.148	$1.48
30	$0.146	$4.38
100	$0.144	$14.40

Inventory:5,507

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Part Number : SI1034CX-T1-GE3
Package/Case : SC89-6
Brand : Siliconix
Components Classification : FET, MOSFET Arrays
Datesheet : SI1034CX-T1-GE3 DataSheet (PDF)
Series : SI1034CX

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Overview of SI1034CX-T1-GE3

The SI1034CX-T1-GE3 is a high-efficiency, synchronous rectified step-down DC-DC converter that provides a compact solution for power management applications. This IC offers a wide input voltage range and high efficiency, making it ideal for various power supply designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

VIN: Input Voltage
VOUT: Output Voltage
EN: Enable Pin
PGND: Power Ground
SW: Switch Node
FB: Feedback Pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI1034CX-T1-GE3 IC for a visual representation.

Key Features

High Efficiency: The SI1034CX-T1-GE3 offers high efficiency to minimize power loss and maximize energy savings.
Wide Input Voltage Range: This DC-DC converter supports a wide input voltage range, allowing flexibility in power supply designs.
Synchronous Rectification: Incorporates synchronous rectification technology for improved efficiency and performance.
Compact Size: The IC is available in a compact package, saving space in circuit layouts and designs.
Overcurrent Protection: Features overcurrent protection functionality to safeguard the IC and connected components.

Note: For detailed technical specifications, please refer to the SI1034CX-T1-GE3 datasheet.

Application

Power Management: Suitable for various power management applications requiring step-down voltage conversion.
Portable Devices: Ideal for use in portable electronic devices where high efficiency and compact size are essential.
Embedded Systems: Can be used in embedded systems and IoT devices for efficient power supply solutions.

Functionality

The SI1034CX-T1-GE3 is a synchronous rectified step-down DC-DC converter that efficiently converts input voltage to a lower output voltage, making it ideal for power management applications that require high efficiency and small form factor.

Usage Guide

Input Voltage: Connect the VIN pin to the input voltage source within the specified range.
Output Voltage: Connect the VOUT pin to the load to provide the regulated output voltage.
Enable Pin: Use the EN pin to enable or disable the converter as needed.

Frequently Asked Questions

Q: What is the typical efficiency of the SI1034CX-T1-GE3?
A: The SI1034CX-T1-GE3 offers high efficiency levels, typically above 90% under nominal operating conditions.

Q: Can the SI1034CX-T1-GE3 handle transient overcurrent conditions?
A: Yes, the SI1034CX-T1-GE3 is designed to handle transient overcurrent conditions and provides overcurrent protection for reliable operation.

Equivalent

For similar functionalities, consider these alternatives to the SI1034CX-T1-GE3:

LT8610: A high-efficiency synchronous step-down DC-DC converter with similar performance characteristics and features.
TPS62130: This IC from Texas Instruments offers comparable efficiency and input voltage range for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	SC-89-6	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	610 mA	Rds On - Drain-Source Resistance	396 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	400 mV
Qg - Gate Charge	1.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	220 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI1	Brand	Vishay Semiconductors
Configuration	Dual	Fall Time	11 ns
Forward Transconductance - Min	7.5 S	Height	0.6 mm
Length	1.66 mm	Product Type	MOSFET
Rise Time	16 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	26 ns	Typical Turn-On Delay Time	11 ns
Width	1.2 mm	Unit Weight	0.001129 oz

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