SGP06N60

Name: SGP06N60
Brand: Infineon
Rating: 4.5 (10 reviews)

Insulated Gate Bipolar Transistor (IGBT) capable of handling 12A of collector current and with a breakdown voltage of 600V (V(BR)CES)

Inventory:9,951

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Part Number : SGP06N60
Package/Case : TO-220-3
Brand : INFINEON
Components Classification : Single IGBTs
Datesheet : SGP06N60 DataSheet (PDF)
Series : SGP06N60

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Overview of SGP06N60

IGBT NPT 600 V 12 A 68 W Through Hole PG-TO220-3-1

Key Features

High voltage capability for added safety and performance
Fast switching speed for efficient power conversion and reduced downtime
Low RDS(ON) for high efficiency and reliability
Suitable for use in a range of industrial applications and harsh environments
Wide operating temperature range for reliability and performance
Compliant with RoHS regulations for environmental safety

Application

For efficient power
High quality welding
Light up your home
Control your motors
Invert solar energy
Correct power factor

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	IGBT Transistors	RoHS	Details
Technology	Si	Package / Case	TO-220-3
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Maximum Gate Emitter Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Series	SGP06N60	Brand	Infineon Technologies
Continuous Collector Current Ic Max	12 A	Height	9.25 mm
Length	10 mm	Product Type	IGBT Transistors
Factory Pack Quantity	500	Subcategory	IGBTs
Width	4.4 mm	Part # Aliases	SP000683112 SGP06N60XKSA1
Unit Weight	0.211644 oz

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