• packageimg
packageimg

SGB07N120

IGBT Transistors FAST IGBT NPT TECH 1200V 8A

Quantity Unit Price(USD) Ext. Price
1 $5.597 $5.60
200 $2.166 $433.20
500 $2.090 $1,045.00
1000 $2.053 $2,053.00

Inventory:5,600

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SGB07N120 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SGB07N120

The SGB07N120 IGBT by Infineon is designed to deliver reliable performance and exceptional power efficiency in various industries. Whether it's powering solar inverters to harness renewable energy or driving microwave ovens for quick and convenient cooking, this product is engineered to meet the demands of modern applications. From industrial welding operations to residential rice cookers, Infineon's IGBT portfolio offers a seamless solution for all power management requirements

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid SGB07N120 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Case Connection COLLECTOR Collector Current-Max (IC) 16.5 A
Collector-Emitter Voltage-Max 1200 V Configuration SINGLE
Fall Time-Max (tf) 61 ns Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W Qualification Status Not Qualified
Rise Time-Max (tr) 24 ns Surface Mount YES
Terminal Form GULL WING Terminal Position SINGLE
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 520 ns Turn-on Time-Nom (ton) 56 ns

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

STD826T4

STD826T4

STD826T4 - Bipolar Junction Transistor (BJT) PNP, 30V 3A 15000mW, DPAK Package, Tape and Reel
NTD4302T4G

NTD4302T4G

The NTD4302T4G MOSFET is a single N-Channel power component designed for high voltage and high current applications
MJD2955T4G

MJD2955T4G

Transistor General Purpose PNP Bipolar Junction 60V 10A 1750mW DPAK Package Tape and Reel
IRGP4086PBF

IRGP4086PBF

IGBT Transistors with Ultra Fast 300V 40A Performance
IRF9530PBF

IRF9530PBF

P-Channel Power MOSFET with a Voltage Rating of 100V and Current Handling Capability of 12A in TO-220AB Package
IXGN320N60A3

IXGN320N60A3

IGBT Transistors rated at 320 Amps and 600V
GA200SA60UP

GA200SA60UP

600V N-channel transistor module
IPD65R250E6

IPD65R250E6

Product Name: IPD65R250E6
IRL540PBF

IRL540PBF

MOSFET N-CH 100V HEXFET MOSFET
STD35NF06LT4

STD35NF06LT4

10V gate-source voltage rated MOSFET