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SGB15N120

Reliable and rugged NPT IGBT transistor for harsh environment

Quantity Unit Price(USD) Ext. Price
1 $8.544 $8.54
200 $3.307 $661.40
500 $3.191 $1,595.50
1000 $3.133 $3,133.00

Inventory:7,165

*The price is for reference only.
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Overview of SGB15N120

The Infineon SGB15N120 is a top-of-the-line IGBT (Insulated Gate Bipolar Transistor) with a wide range of features that make it an excellent choice for various applications. With 30% lower E off compared to the previous generation, this IGBT offers improved efficiency and performance. Its short circuit withstand time of 10s ensures durability and reliability under extreme conditions. Designed for operation above 30kHz, the SGB15N120 is suitable for high-frequency applications such as induction heating and microwave ovens. Its high ruggedness and temperature stable behavior make it a robust and dependable choice for demanding environments

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid SGB15N120 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code D2PAK
Package Description GREEN, PLASTIC, D2PAK-3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Case Connection COLLECTOR
Collector Current-Max (IC) 30 A Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE Fall Time-Max (tf) 26 ns
Gate-Emitter Thr Voltage-Max 5 V Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 198 W
Qualification Status Not Qualified Rise Time-Max (tr) 24 ns
Surface Mount YES Terminal Form GULL WING
Terminal Position SINGLE Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 683 ns
Turn-on Time-Nom (ton) 68 ns

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