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BSC028N06LS3GATMA1

High-performance N-channel MOSFET that can handle 60V and 23A

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Overview of BSC028N06LS3GATMA1

The BSC028N06LS3GATMA1 is a power MOSFET transistor designed for high-performance and efficiency in various electronic applications. It offers low on-state resistance and superior switching performance, making it suitable for power management and conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Control terminal for the MOSFET
  • Drain: Power input/output connection
  • Possible additional pins based on package type

Circuit Diagram

Include a circuit diagram illustrating the connections and usage of the BSC028N06LS3GATMA1 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The BSC028N06LS3GATMA1 features a low RDS(on) value, minimizing power losses and improving efficiency in power applications.
  • High Switching Speed: This MOSFET offers fast switching characteristics, suitable for high-frequency switching applications.
  • High Current Capability: With its high current-handling capability, the BSC028N06LS3GATMA1 is suitable for power delivery and management in various circuits.
  • Low Gate Charge: The MOSFET's low gate charge allows for efficient gate control and reduced switching losses.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, ensuring reliable operation even at high power levels.

Note: For detailed technical specifications, please refer to the BSC028N06LS3GATMA1 datasheet.

Application

  • Power Management: Ideal for power switching, motor control, and DC-DC conversion applications.
  • Voltage Regulation: Suitable for use in voltage regulation and power distribution circuits.
  • Inverter and Converter Systems: Used in inverters, converters, and other power electronics systems requiring high-efficiency switching.

Functionality

The BSC028N06LS3GATMA1 is a power MOSFET transistor designed to efficiently control and manage power flow in various electronic systems. Its low on-state resistance and fast switching make it a valuable component in power management and conversion.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the MOSFET's on/off state.
  • Power Connections: Connect the drain and source pins to the power input/output as per the circuit requirements.
  • Heat Dissipation: Ensure proper thermal management to optimize the MOSFET's performance and reliability.

Frequently Asked Questions

Q: Is the BSC028N06LS3GATMA1 suitable for high-frequency applications?
A: Yes, the BSC028N06LS3GATMA1 offers high switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the BSC028N06LS3GATMA1:

  • IRF3205: This power MOSFET offers similar performance and characteristics suitable for power management applications.
  • FDN302P: A power MOSFET transistor with comparable specifications and performance to the BSC028N06LS3GATMA1.
  • FQP30N06L: This MOSFET transistor provides similar power handling capabilities and switching characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS, RoHS compliant, non dry
packageNameMarketing SuperSO8 5x6 msl 1
halogenFree yes customerInfo STANDARD
fgr J95 productClassification COM
productStatusInfo active hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP000453652
fourBlockPackageName PG-TDSON-8-1 rohsCompliant yes
opn BSC028N06LS3GATMA1 completelyPbFree no
sapMatnrSali SP000453652

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