PBSS9110D,115

Name: PBSS9110D,115
Brand: Nexperia USA Inc.
Rating: 4.5 (10 reviews)

Bipolar Transistors - BJT PBSS9110D/SOT457/SC-74

Quantity	Unit Price(USD)	Ext. Price
1	$0.282	$0.28
200	$0.109	$21.80
500	$0.105	$52.50
1000	$0.103	$103.00

Inventory:8,381

*The price is for reference only.

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Part Number : PBSS9110D,115
Package/Case : TSOP-6
Brand : Nexperia USA Inc.
Components Classification : Single Bipolar Transistors
Datesheet : PBSS9110D,115 DataSheet (PDF)
Series : PBSS9110D

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Overview of PBSS9110D,115

PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS8110D.

Key Features

Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified

Application

High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status	Active	Transistor Type	PNP
Current - Collector (Ic) (Max)	1 A	Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	320mV @ 100mA, 1A	Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 500mA, 5V	Power - Max	700 mW
Frequency - Transition	100MHz	Operating Temperature	150°C (TJ)
Grade	Automotive	Qualification	AEC-Q100
Mounting Type	Surface Mount	Package / Case	TSOP-6
Supplier Device Package	6-TSOP	Base Product Number	PBSS9110
Manufacturer	Nexperia	Product Category	Bipolar Transistors - BJT
RoHS	Details	Mounting Style	SMD/SMT
Transistor Polarity	PNP	Configuration	Single
Collector- Emitter Voltage VCEO Max	100 V	Collector- Base Voltage VCBO	120 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	320 mV
Maximum DC Collector Current	1 A	Pd - Power Dissipation	700 mW
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Brand	Nexperia
DC Collector/Base Gain hfe Min	150 at 1 mA, 5 V, 150 at 250 mA, 5 V, 150 at 500 mA, 5 V, 125 at 1 A, 5 V	DC Current Gain hFE Max	150 at 1 mA, 5 V
Height	1 mm	Length	3.1 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Width	1.7 mm	Part # Aliases	934057981115
Unit Weight	0.000705 oz

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