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IRF9Z34SPBF

Transistor with P-Channel Si technology, capable of handling 60 volts and 18 amps, housed in a 3-pin D2PAK package

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Overview of IRF9Z34SPBF

The IRF9Z34SPBF is an N-channel power MOSFET designed for high-performance applications.It features a low on-state resistance,high current capability,and fast switching characteristics,making it suitable for power management and amplification in various electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Gate:Input terminal for controlling the MOSFET's conductivity.
  • Drain:Output terminal for the drained current.
  • VSS:Ground connection for the MOSFET.
  • VDD:Positive power supply.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF9Z34SPBF MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IRF9Z34SPBF offers a low RDS(on) value, minimizing power losses and improving efficiency.
  • High Current Capability: This MOSFET can handle high currents, making it suitable for power applications.
  • Fast Switching Speed: With its fast switching characteristics, the IRF9Z34SPBF is ideal for high-frequency applications.
  • High Voltage Rating: Operating at high voltages, this MOSFET is compatible with a wide range of voltage levels.
  • Enhanced Thermal Performance: The package design and thermal characteristics ensure effective heat dissipation for reliable operation.

Note: For detailed technical specifications, please refer to the IRF9Z34SPBF datasheet.

Application

  • Power Management: Ideal for use in power supply regulation, motor control, and other power management applications.
  • Switching Circuits: Suitable for switching circuits, such as DC-DC converters and motor drives, due to its fast response time.
  • Audio Amplification: Can be used in audio amplifier circuits for efficient power amplification.

Functionality

The IRF9Z34SPBF N-channel power MOSFET is designed to control high currents with low resistance, providing efficient power management and amplification capabilities in electronic systems.

Usage Guide

  • Power Supply: Connect the VDD pin to the positive power supply and the VSS pin to ground.
  • Gate Control: Apply appropriate voltage signals to the gate pin to control the conductivity of the MOSFET.
  • Load Connection: Connect the load between the drain and the source terminals to utilize the MOSFET's switching capabilities.

Frequently Asked Questions

Q: Is the IRF9Z34SPBF suitable for high-frequency applications?
A: Yes, the fast switching speed of the IRF9Z34SPBF makes it suitable for high-frequency circuitry.

Equivalent

For similar functionalities, consider these alternatives to the IRF9Z34SPBF:

  • IRF3205: A reliable N-channel power MOSFET with comparable performance characteristics to the IRF9Z34SPBF.
  • IRF540: This MOSFET offers high current capability and is suitable for power applications similar to the IRF9Z34SPBF.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 18 A
Rds On - Drain-Source Resistance 140 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 34 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 88 W Channel Mode Enhancement
Series IRF9Z Brand Vishay Semiconductors
Configuration Single Height 4.83 mm
Length 10.67 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Width 9.65 mm Unit Weight 0.139332 oz

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