IRF9Z34SPBF
Transistor with P-Channel Si technology, capable of handling 60 volts and 18 amps, housed in a 3-pin D2PAK package
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Part Number : IRF9Z34SPBF
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Package/Case : D2PAK-3
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRF9Z34SPBF DataSheet (PDF)
The IRF9Z34SPBF is an N-channel power MOSFET designed for high-performance applications.It features a low on-state resistance,high current capability,and fast switching characteristics,making it suitable for power management and amplification in various electronic circuits. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRF9Z34SPBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRF9Z34SPBF datasheet. Functionality The IRF9Z34SPBF N-channel power MOSFET is designed to control high currents with low resistance, providing efficient power management and amplification capabilities in electronic systems. Usage Guide Q: Is the IRF9Z34SPBF suitable for high-frequency applications? For similar functionalities, consider these alternatives to the IRF9Z34SPBF:Overview of IRF9Z34SPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the fast switching speed of the IRF9Z34SPBF makes it suitable for high-frequency circuitry.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 18 A |
Rds On - Drain-Source Resistance | 140 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 34 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 88 W | Channel Mode | Enhancement |
Series | IRF9Z | Brand | Vishay Semiconductors |
Configuration | Single | Height | 4.83 mm |
Length | 10.67 mm | Product Type | MOSFET |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Width | 9.65 mm | Unit Weight | 0.139332 oz |
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