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SI4925BDY

Transistor device designed for high-current operation with low voltage drop

Inventory:5,709

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Overview of SI4925BDY

The SI4925BDY is a dual n-channel MOSFET transistor designed for use in power management applications. This MOSFET features a low ON-resistance and high switching speed, making it ideal for DC-DC converters, voltage regulators, and other power control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate (Input)
  • D: Drain (Output)
  • S: Source (Common)
  • G: Gate (Input)
  • D: Drain (Output)
  • S: Source (Common)

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI4925BDY MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two n-channel MOSFETs in a single package for versatile power control.
  • Low ON-Resistance: The SI4925BDY has low ON-resistance to minimize power loss and improve efficiency.
  • High Switching Speed: This MOSFET offers high switching speed for fast response in power management applications.
  • Wide Operating Voltage Range: Operates effectively within a broad voltage range for compatibility with various systems.
  • Temperature Stability: The SI4925BDY maintains stable performance across temperature variations for reliable operation.

Note: For detailed technical specifications, please refer to the SI4925BDY datasheet.

Application

  • Power Management: Ideal for use in DC-DC converters, voltage regulators, power amplifiers, and motor control circuits.
  • Switching Circuits: Suitable for designing high-frequency switching circuits with efficient power handling capabilities.
  • Battery Charging Systems: Used in battery charging systems for efficient power transfer and control.

Functionality

The SI4925BDY dual n-channel MOSFET provides reliable and efficient power control in various electronic applications. Its low ON-resistance and high switching speed make it a versatile component for power management.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the input signal for controlling the MOSFET switching.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins to the load circuit for power transfer.
  • Operating Conditions: Ensure that the operating voltage and current levels are within the specifications provided in the datasheet.

Frequently Asked Questions

Q: What is the maximum operating voltage for the SI4925BDY?
A: The SI4925BDY can handle a maximum operating voltage of XYZ volts.

Q: Is the SI4925BDY suitable for high-power applications?
A: Yes, the low ON-resistance and high switching speed of the SI4925BDY make it suitable for high-power applications requiring efficient power control.

Equivalent

For similar functionalities, consider these alternatives to the SI4925BDY:

  • SI4930BDY: A triple n-channel MOSFET with enhanced power handling capabilities for demanding applications.
  • SI4912BDY: This is a single n-channel MOSFET offering similar performance to the SI4925BDY but in a different package.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS N
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Tradename TrenchFET
Series SI4 Brand Vishay / Siliconix
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Factory Pack Quantity 100
Subcategory MOSFETs Width 3.9 mm
Unit Weight 0.006596 oz

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