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NVTR4503NT1G

Product NVTR4503NT1G is a N-channel MOSFET with specifications of 30V voltage, 1.5A current, 420mW power dissipation, and 110mΩ resistance at 10V

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Overview of NVTR4503NT1G

The NVTR4503NT1G is a 20 V P-Channel Trench MOSFET for use in power management applications This MOSFET features low on-resistance, it suitable for various switching and amplification tasks in electronic circuits.

h3>Pinout

(Note: The pin configuration below is a general representation Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 30
VGS Max (V) 20 VGS(th) Max (V) 3
ID Max (A) 2 PD Max (W) 0.73
RDS(on) Max @ VGS = 4.5 V (mΩ) 140 RDS(on) Max @ VGS = 10 V (mΩ) 110
Qg Typ @ VGS = 10 V (nC) 3.6 Ciss Typ (pF) 135
Pricing ($/Unit) $0.0811

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