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IRG4PH40KDPBF

HEXFRED TO-247 package containing an N-channel IGBT rated for 30A current and 1200V voltage, accompanied by a diode

Inventory:9,165

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Overview of IRG4PH40KDPBF

The IRG4PH40KDPBF is a high-power IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring high switching frequencies and high efficiency. This IGBT module offers a low conduction and switching losses, making it suitable for power electronics systems where energy efficiency is crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connected to the high-voltage power supply
  • Emitter (E): Output terminal connected to the load
  • Gate (G): Control terminal for switching the IGBT
  • Collector-Emitter Freewheel Diode (FWD): Provides a path for reverse current flow
  • Collector-Emitter Voltage Sense (VCE): Voltage sensing for protection and feedback purposes

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRG4PH40KDPBF IGBT for a visual representation.

Key Features

  • High-Power IGBT: The IRG4PH40KDPBF is designed to handle high power levels efficiently.
  • Low Conduction and Switching Losses: Offers reduced power losses for improved efficiency.
  • High Switching Frequencies: Capable of operating at high switching frequencies for fast and responsive control.
  • Integrated Freewheel Diode: Includes an integrated freewheel diode for improved reliability in inductive load applications.
  • Temperature Sensing: Provides temperature sensing features for thermal protection and monitoring.

Note: For detailed technical specifications, please refer to the IRG4PH40KDPBF datasheet.

Application

  • Motor Drives: Ideal for use in motor drive applications requiring high power handling capabilities.
  • Renewable Energy Systems: Suitable for inverters and converters in renewable energy systems like solar and wind power.
  • Industrial Power Supplies: Used in industrial power supplies for efficient power management and control.

Functionality

The IRG4PH40KDPBF IGBT is designed to efficiently switch high power loads with minimal losses. It provides reliable power control and is suitable for a wide range of power electronics applications.

Usage Guide

  • Power Connections: Connect the Collector and Emitter terminals appropriately to the power supply and load.
  • Gate Control: Apply the necessary gate voltage to control the switching of the IGBT.
  • Freewheel Diode: Ensure proper connections for the freewheel diode to handle reverse current safely.

Frequently Asked Questions

Q: What is the maximum operating voltage for the IRG4PH40KDPBF?
A: The IRG4PH40KDPBF can handle high operating voltages, typically in the range of several hundred volts.

Q: Is the IRG4PH40KDPBF suitable for high-frequency applications?
A: Yes, the IRG4PH40KDPBF is capable of operating at high switching frequencies, making it suitable for high-frequency applications like inverters and converters.

Equivalent

For similar functionalities, consider these alternatives to the IRG4PH40KDPBF:

  • IRG4BC20UDPBF: Another high-power IGBT module with similar performance characteristics from Infineon Technologies.
  • IXGH48N60C3D1: A high-speed IGBT with low conduction losses suitable for high-frequency applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 3.4 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 30 A
Pd - Power Dissipation 160 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Brand Infineon Technologies
Continuous Collector Current Ic Max 30 A Height 20.3 mm
Length 15.9 mm Product Type IGBT Transistors
Factory Pack Quantity 400 Subcategory IGBTs
Width 5.3 mm Unit Weight 1.340411 oz

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