IRG4PH40KDPBF
HEXFRED TO-247 package containing an N-channel IGBT rated for 30A current and 1200V voltage, accompanied by a diode
Inventory:9,165
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Part Number : IRG4PH40KDPBF
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Package/Case : TO247-3
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Brand : Infineon Technologies
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Components Classification : Single IGBTs
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Datesheet : IRG4PH40KDPBF DataSheet (PDF)
The IRG4PH40KDPBF is a high-power IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring high switching frequencies and high efficiency. This IGBT module offers a low conduction and switching losses, making it suitable for power electronics systems where energy efficiency is crucial. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRG4PH40KDPBF IGBT for a visual representation. Note: For detailed technical specifications, please refer to the IRG4PH40KDPBF datasheet. Functionality The IRG4PH40KDPBF IGBT is designed to efficiently switch high power loads with minimal losses. It provides reliable power control and is suitable for a wide range of power electronics applications. Usage Guide Q: What is the maximum operating voltage for the IRG4PH40KDPBF? Q: Is the IRG4PH40KDPBF suitable for high-frequency applications? For similar functionalities, consider these alternatives to the IRG4PH40KDPBF:Overview of IRG4PH40KDPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRG4PH40KDPBF can handle high operating voltages, typically in the range of several hundred volts.
A: Yes, the IRG4PH40KDPBF is capable of operating at high switching frequencies, making it suitable for high-frequency applications like inverters and converters.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 3.4 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 30 A |
Pd - Power Dissipation | 160 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 30 A | Height | 20.3 mm |
Length | 15.9 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 400 | Subcategory | IGBTs |
Width | 5.3 mm | Unit Weight | 1.340411 oz |
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