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NVMFS5C404NLAFT1G

Metal-Oxide-Semiconductor Field-Effect Transistor T6 40V High Efficiency FET

Inventory:8,655

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Overview of NVMFS5C404NLAFT1G

The NVMFS5C404NLAFT1G is a single N-channel PowerTrench MOSFET designed for high-efficiency power management applications. It features a low on-resistance and a robust design, making it ideal for various power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a detailed circuit diagram highlighting the connections and operation of the NVMFS5C404NLAFT1G MOSFET for better understanding.

Key Features

  • High Efficiency Power Management:The NVMFS5C404NLAFT1G MOSFET offers high efficiency for power management tasks, resulting in minimal power loss and heat generation.
  • Low On-Resistance:With a low on-resistance, this MOSFET enables efficient power switching and amplification, reducing voltage drops and improving performance.
  • Robust Design:Designed for durability and reliability, the NVMFS5C404NLAFT1G can withstand high currents and voltages in demanding applications.
  • Fast Switching Speed:This MOSFET provides fast switching speeds, allowing for rapid transitions between on and off states in power circuits.

Note: For detailed technical specifications, please refer to the NVMFS5C404NLAFT1G datasheet.

Application

  • Power Switching: Ideal for use in power switching circuits, such as DC-DC converters and motor control applications.
  • Voltage Regulation: Suitable for voltage regulation tasks in power supplies and battery management systems.
  • Amplification: Can be used for signal amplification in audio amplifiers and other amplification circuits.

Functionality

The NVMFS5C404NLAFT1G MOSFET is a high-performance power transistor that enables efficient power management and switching in various electronic systems.

Usage Guide

  • Gate Control: Apply appropriate gate voltage levels to control the switching behavior of the MOSFET.
  • Heat Management: Ensure proper heat dissipation to prevent overheating during high-power operation.
  • Voltage Compatibility: Verify that the drain-source voltage rating of the MOSFET meets the requirements of the application.

Frequently Asked Questions

Q: Is the NVMFS5C404NLAFT1G suitable for automotive applications?
A: Yes, the NVMFS5C404NLAFT1G is designed for automotive-grade performance, making it suitable for automotive power management systems.

Equivalent

For similar functionalities, consider these alternatives to the NVMFS5C404NLAFT1G:

  • AON6404: A similar N-channel Power MOSFET with comparable specifications and performance characteristics.
  • IRLB8748: This MOSFET offers similar power management capabilities and voltage ratings for various applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type DFN5 5x6, 1.27P (SO−8FL) Case Outline 506EZ
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 40
VGS Max (V) 20 VGS(th) Max (V) 2
ID Max (A) 352 PD Max (W) 200
RDS(on) Max @ VGS = 2.5 V (mΩ) null RDS(on) Max @ VGS = 4.5 V (mΩ) 1
RDS(on) Max @ VGS = 10 V (mΩ) 0.67 Qg Typ @ VGS = 4.5 V (nC) 81
Qg Typ @ VGS = 10 V (nC) 181 Ciss Typ (pF) 12168
Pricing ($/Unit) $1.6913

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